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Grant winners | Times Higher Education (THE)
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Award winner: Sankara Narayanan Ekkanath Madathil. - Institution: University of Sheffield. - Value: £101,899. High-power IGBT modules for ...
Programme
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14:10. Polarisation super junction based GaN power semiconductor devices. S N Ekkanath Madathil, Univ of Sheffield. 14:30. Concepts and technologies for enhancement mode GaN based HFETS. N Ketteniss, RWTH Aachen. 14:50. Gate dielectrics on SiC and GaN for power switches fabrication. P Godignon, CNM-CSIC.
ΔΑΣΤΑ Πολυτεχνείου Κρήτης - PhD Postgraduate Award - Next Generation...
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Shankar Ekkanath Madathil. The candidate must hold a first-class class honours degree and preferably a Master's degree in electrical and ...
TUM - Overview of Power Microelectronics- an Individual View
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Oberseminar Elektrophysik und Physikalische Elektronik Referent: Prof. S.N. Ekkanath Madathil, Rolls Royce/Royal Academy Professor of Power Electronic Systems, Sheffield University, U.K..
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