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Experts Invited to Asia-Pacific Conference on Silicon Carbide and...
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BEIJING, June 19, PRNewswire/ -- The APCSCRM conference, which will be held July 9-12, 2018, invited well-known experts from the Asia-Pacifi...
Business Profiles
Researchgate: Yasuto Hijikata
Saitama, Japan
Experts Invited to Asia-Pacific Conference on Silicon ...
en.prnasia.com
Yasuto HIJIKATA （Saitama University, Japan） A Macroscopic Simulation of the SiC Thermal Oxidation Process based on the Si and C Emission Model . 5.
Education
IEICE Trans - Wavelength-Division-Multiplexing in Fiber-Optic...
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Wavelength-Division-Multiplexing in Fiber-Optic. Micro-Probe Array for Ultrasonic Field Measurements. Yasuto HIJIKATA. †a), Nonmember and ...
Books & Literature
Photoluminescence study of oxidation-induced faults in 4H-SiC...
doaj.org
We investigated the effect of thermal oxidation on crystalline faults in 4H-SiC epilayers using photoluminescence imaging. We found that a comb-shaped
https://books.google.com › booksPhysics and Technology of Silicon Carbide Devices
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Physics and Technology of Silicon Carbide Devices http://dx.doi.org Edited by Yasuto Hijikata Contributors Mariana Amorim Fraga, Rodrigo Savio ...
Si and C emission into the oxide layer during the oxidation of...
doaj.org
Si and C emission into the oxide layer during the oxidation of silicon carbide and SiO2 growth on the oxide surface were experimentally confirmed from...
Physics and Technology of Silicon Carbide …
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· Physics and Technology of Silicon Carbide Devices. Edited by: Yasuto Hijikata. ISBN , Published
Related Documents
CiteSeerX — Characterization of MOS capacitors fabricated on n-type...
citeseerx.ist.psu.edu
@MISC{Poggi_characterizationof, author = {Antonella Poggi and Francesco Moscatelli and Yasuto Hijikata and Michele Sanmartin and Fabrizio Tamarri and Roberta Nipoti ...
Analysis of the energy structure of nitrogen δ-doped GaAs...
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Nitrogen δ-doped GaAs superlattices were fabricated and their energy structures were investigated. Several transitions related to E
CiteSeerX — Photoemission Spectroscopy and In-Situ ...
citeseerx.ist.psu.edu
Photoemission Spectroscopy and In-Situ Spectroscopic Ellipsometry Studies on the Ar ... Yasuto Hijikata ... In-Situ Spectroscopic Ellipsometry Studies on ...
Scientific Publications
Yasuto Hijikata – ScienceOpen
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Yasuto Hijikata. Actions. Invite review; New message ... Antonella Poggi, Francesco Moscatelli, Yasuto Hijikata … (2007). Article 0 comments Cited 0 times
Publications
Theoretical studies for Si and C emission into SiC layer during...
core.ac.uk
Theoretical studies for Si and C emission into SiC layer during oxidation . By 泰斗 土方, ヤスト ヒジカタ, Yasuto HIJIKATA, ...
Variation of interface trap level charge density within the bandgap...
link.springer.com
Takeshi Yamamoto, Yasuto Hijikata, Hiroyuki Yagucgi and Sadafumi Yashida, J. Appl. Phys. 47(10), (2008)Google Scholar ...
Miscellaneous
Yasuto Hijikata | Publons
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View Yasuto Hijikata's profile on Publons with 102 publications and 71 reviews.
SCHOLAR - CNKI学术搜索
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CNKI学术搜索是一个基于海量资源的跨学科、跨语种、跨文献类型的学术资源搜索平台，其资源库涵盖各类学术期刊、论文、报纸、专利、标准、年鉴、工具书等，旨在为国内外研究人员提供全面、权威、系统的知识网络。
Researcher: Yasuto Hijikata in Publications - Dimensions
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Re-imagining discovery and access to research: grants, datasets, publications, citations, clinical trials, patents and policy documents in one place.
2012英文书Physics and Technology of Silicon Carbide Devices - 材料 ...
muchong.com
Edited by Yasuto Hijikata, ISBN , Hard cover, 402 pages, Publisher: InTech, Published: October 16, Recently, some SiC power devices ...
Electrically controllable position-controlled color centers created...
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Electrically controllable position-controlled color centers created in SiC pn junction diode by proton beam writing - Volume 33 Issue 20
Journal of Materials Research: Volume Issue 20 | Cambridge Core
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Cambridge Core - Journal of Materials Research - Volume Issue 20
Characterization of MOS capacitors fabricated on n-type 4H-SiC ...
www.bo.imm.cnr.it
Antonella Poggi, Francesco Moscatelli, Yasuto Hijikata, Sandro Solmi, Michele Sanmartin, Fabrizio Tamarri, Roberta Nipoti. Biblio References:.
Análise da produção científica em nanotecnologia no Brasil
vlab4u.info
FRAGA, M. A. ; PESSOA, R. S. ; MASSI, Marcos ; Maciel, H., S.. Applications of SiC-based thin films in electronic and MEMS devices. Em: Yasuto Hijikata. (Org.).
Dr. ARGUNOVA Tatiana, physicist, publications
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Edited by: Yasuto Hijikata. Published by: Intech. Croatia p. Section 1. Chapter 2. Pages: DOI: ISBN:
Japanese Nuclear Incident: Technical Aspects Jonathan Medalia
orendl.surge.sh
... Yuki Tanaka , Mikio Kandori , Toru Yoshie , Yasuto Hijikata , Takeshi Ohshima , Improvement of radiation response of SiC MOSFETs under high temperature ...
John Rozen - Homepage
matphys.net
Welcome to my website. Bienvenue sur mon site internet. I gathered resume, publications, reports and projects files...
[PDF] Investigation of SiC/Oxide Interface Structures by...
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We have investigated SiC/oxide interface structures by the use of spectroscopic ellipsometry. The depth profile of the optical constants of thermally grown...
poggi | Bologna UNIT
www.bo.imm.cnr.it
Yasuto Hijikata, Sadafumi Yoshida, Francesco Moscatelli, Antonella Poggi, Sandro Solmi, Stefano Cristiani, Roberta Nipoti. Fabrication of MOS capacitors by wet ...
sanmartin | Bologna UNIT
www.bo.imm.cnr.it
Antonella Poggi, Francesco Moscatelli, Yasuto Hijikata, Sandro Solmi, Michele Sanmartin, Fabrizio Tamarri, Roberta Nipoti. Characterization of MOS capacitors ...
Molecular beam epitaxy of ErGaAs alloys on GaAs (001) substrates
www.infona.pl
Yasuto Hijikata. Graduate School of Science and Engineering, 255 Shimo-Okubo, Sakura-ku, Saitama University,... Shigeyuki Kuboya. Department of Advanced ...
The effects of surface amorphous structure - X-mol
en.x-mol.com
Yu-ichiro Matsushita, Yoritaka Furukawa, Yasuto Hijikata, Takeshi Ohshima. We report our first-principles calculations that clarify the electronic ...
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