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by ИД Лошкарев · — Yasufumi Takagi, Yuzo Furukawa, Akihiro Wakahara, Hirofumi Kan Lattice relaxation process and crystallographic tilt in GaP layers grown on misoriented ... › _avtoreferats

Current-Voltage Characteristics of Single InGaN/GaN ...

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by BH Le — Yasufumi Takagi. 2. , Hiroshi. Okada" and Akihiro Wakahara"; "Toyohashi University of Technology,. Toyohashi, Japan; 2Harnarnatsu Photonics K. K., ... › arafin.1 › files ›

Лошкарев Иван Дмитриевич НАПРЯЖЕННОЕ ...

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by ИД Лошкарев — [65] Yasufumi Takagi, Yuzo Furukawa, Akihiro Wakahara, Hirofumi Kan Lattice relaxation process and crystallographic tilt in GaP layers grown on misoriented ... › disser › Loshkarev_I_D

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by ИД Лошкарев — Yasufumi Takagi, Yuzo Furukawa, Akihiro Wakahara, Hirofumi Kan Lattice relaxation process and crystallographic tilt in GaP layers grown on misoriented ... › autoreferat › Loshkarev

All web results to the name "Yasufumi Takagi"

Surface Evolution of GaP Grown on Si Substrates Using ...

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Yasufumi Takagi, Yuzo Furukawa, Akihiro Wakahara, Journal of Applied Physics ,第6期. 机译：金属有机汽相外延生长在取向错误的Si（001）衬底上生长的GaP层 ... › open-access_re...

Напряженное состояние и дислокационная структура ...

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[65] Yasufumi Takagi, Yuzo Furukawa, Akihiro Wakahara, Hirofumi Kan Lattice relaxation process and crystallographic tilt in GaP layers grown on misoriented ... › content

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Yasufumi Takagi and Akihiro Wakahara Free People Check