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ASM INTERNATIONAL N.V., Espoo, FI

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US B2 - Method of delivering activated species for rapid...

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Vaino Kilpi: Apparatus for growing thin films: US : 22 Feb 2001: 27 Sep 2001: Ivo Raaijmakers: Conformal thin films over textured capacitor electrodes ...

US B2 - Method and apparatus for monitoring solid precursor...

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Method and apparatus for monitoring solid precursor delivery ... Vaino Kilpi: Apparatus for growing thin films: US : 22 Feb 2001: 27 Sep 2001: Ivo Raaijmakers:

US B2 - Atomic layer deposition apparatus Google...

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Vaino Kilpi: Apparatus for growing thin films: US : Jul 16, 2002: Jul 31, 2003: Applied Materials, Inc. Apparatus and method for plasma assisted ...

Vaino Kilpi - Boliven Public Profile | Innovators at Work

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Atomic Layer Deposition with Plasma Source - Patent application

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Inventors: Vaino Kilpi (Espoo, FI) Wei-Min Li (Espoo, FI) Wei-Min Li (Espoo, FI) Timo Malinen (Espoo, FI) Juhana Kostamo (Espoo, FI) Sven ...

SUBSTRATE LOADING IN AN ALD REACTOR - Patent application

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Inventors: Vaino Kilpi (Espoo, FI) Juhana Kostamo (Espoo, FI) Juhana Kostamo (Espoo, Patent applications by Vaino Kilpi, Espoo FI

CA A1 - Appareil pour faire pousser des pellicules minces...

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Inventeurs, Vaino Kilpi. Déposant, Vaino Kilpi, Asm Microchemistry Oy, Asm International N.V.. Exporter la citation, BiBTeX, EndNote, RefMan. Classifications ...

US B2 - Atomic layer deposition for fabricating thin films...

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Atomic layer deposition for fabricating thin films: US : 19 Nov 2002: 22 May 2003: ... Vaino Kilpi: Apparatus for growing thin films: US : 6 Mar 2003:

Patent US Gas distribution system for cyclical layer...

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Embodiments of the invention are generally directed to a cyclical layer deposition system, which includes a processing chamber, at least one load lock chamber...

US A - Vapor growth apparatus having a diffuser section...

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A vapor growth apparatus comprising a reaction chamber including a gas inlet, a diffuser section, the cross section of which gradually increases in a...

US B2 - Method and apparatus for gas temperature control in a...

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A method and apparatus for controlling the temperature of at least one gas flowing into a processing chamber is provided. In one embodiment, a gas...

US B1 - Counting clock cycles over the duration of a first...

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In an auto baud system and method, the baud rates between two communicating devices are synchronized by timing the transmission of a plurality of bits by...

US B2 - Method for providing gas to a processing chamber...

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A method and apparatus for generating gas for a processing system is provided. In one embodiment, an apparatus for generating gas for a processing system...

US B2 - Membrane gas valve for pulsing a gas Google...

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A gas valve for pulsing a gas comprises a housing having an inlet port, an outlet port, a membrane, and an actuator, wherein the actuator selectively...

Patent US Etch rate detection for reflective multi-material...

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A method and apparatus for etching a photomask substrate with enhanced process monitoring, for example, by providing for optical monitoring at different...