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ESREF Oral Presentations Thu
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Oral Presentations Thursday ... Tsutomu Uesugi 1, Mitsumasa Iwamoto 2 1 Toyota Central R&D Labs., Inc., Japan; 2 Tokyo Institute of Technology, Japan ...
Interests
Tsutomu Uesugi - Patents
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Tsutomu Uesugi patents. Recent bibliographic sampling of Tsutomu Uesugi patents listed/published in the public domain by the USPTO (USPTO Patent ...
Business Profiles
patentbuddy: Tsutomu Uesugi
TOYOTA JIDOSHA KABUSHIKI KAISHA, Seto, JP
Property
WO A2 - Semiconductor devices Google Patents
patents.google.com
A semiconductor device 10 comprises a heterojunction between a lower semiconductor layer 26 made of p-type gallium nitride and an upper semiconductor...
Books & Literature
ken-system: - All Technical Committee Conferences - All Years
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Ookayama Campus, Characteristics of GaN p-n diode with damage layer induced by ICP plasma process. Tsutomu Uesugi, Tetsu Kachi (Toyota Central R&D ...
Tsutomu Uesugi | XanEdu Customization Platform
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Author: Tsutomu Uesugi. Results. Deposition of aluminum oxide layer on GaN using diethyl aluminum ethoxide as a precursor American Institute of ...
Power GaN Devices: Materials, Applications and Reliability
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The author would also like to thank Toyota Motor Corporation, Japan (Dr. Tetsu Kachi, Dr. Masahiro Sugimoto and Dr. Tsutomu Uesugi), and ARPA-E (Dr.
Power GaN Devices: Materials, Applications and Reliability - Google...
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This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most...
Related Documents
Tsutomu Uesugi - researchr alias
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Degradation analysis and current collapse imaging of AlGaN/GaN HEMTs by measurement of electric field-induced optical second-harmonic generationTakashi ...
TRENCH-TYPE SEMICONDUCTOR POWER DEVICES - University of Electronic...
www.freepatentsonline.com
The present invention relates to a semiconductor device. The device comprises a semiconductor substrate. A semiconductor drift region is on the semiconductor...
CiteSeerX — GaN Power Switching Devices for Automotive Applications
citeseerx.ist.psu.edu
BibTeX. @MISC{Uesugi_ganpower, author = {Tsutomu Uesugi and Tetsu Kachi}, title = {GaN Power Switching Devices for Automotive Applications}, year = {} } ...
Automotive Applications of GaN Power Devices | IEEE Conference...
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3 Author(s). Tetsu Kachi ; Toyota Central R&D Labs., Inc., Nagakute, Japan ; Masakazu Kanechika ; Tsutomu Uesugi. Abstract · Authors · References · Cited By ...
Scientific Publications
dblp: Tsuyoshi Ishikawa
dblp2.uni-trier.de
List of computer science publications by Tsuyoshi Ishikawa
Publications
Dr. Tsutomu Uesugi : SPIE.org Profile
spie.org
SPIE Profile : Dr. Tsutomu Uesugi - Toyota Central R&D Labs Inc - the International Society for Optics and Photonics.
Vol.46 No.3 ( )| R&D Review of Toyota CRDL
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Daigo Kikuta, Tetsuo Narita, Naoko Takahashi, Keita Kataoka, Yasuji Kimoto, Kazuyoshi Tomita, Tsutomu Uesugi, Tetsu Kachi and Masahiro Sugimoto.
Reports & Statements
Wikipedia: Ken Maeda - Wikipedia
Ken Maeda was a Japanese comedian, impressionist, actor and choreographer. He was , Urakara, Tsutomu Uesugi, TV Tokyo, Episode 10.
Miscellaneous
WO A1 - Power semiconductor chip, power semiconductor...
patents.google.com
1, "Power Devices for Automotive Applications- Review of Technologies for Low Power Dissipation and High Ruggedness", TSUTOMU UESUGI, R&D REVIEW ...
US A - Insulated gate semiconductor device and fabrication...
patents.google.com
A vertical semiconductor device having an insulated gate structure makes use of a double-gate structure. The double-gate structure dramatically reduces...
DE D Normally switched off HEMT with ohmic gate...
patents.google.com
Inventors, Masahiro Sugimoto, Tetsu Kachi, Tsutomu Uesugi, Hiroyuki Ueda, Narumasa Soejima. Applicant, Toyota Motor Co Ltd. Export Citation, BiBTeX ...
.: EXMATEC/WOCSDICE Invited Speakers :.
exmatec-wocsdice-2014.iesl.forth.gr
Tsutomu Uesugi, TOYOTA Central R&D Labs, Japan "Advanced GaN Power Devices for Automotive Applications" EXMATEC Invited Speakers : Aris Christou, Un.
TDGS - "Takaaki Manaka"
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... , Hiroyuki Ueda, Tsutomu Uesugi, Mitsumasa Iwamoto . Microelectronics Reliability, 54(9-10): ,
1978 Time Machine: Manga Shonen magazine | CosmoDNA
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(Tsutomu Uesugi, Hiroshima). “Yamato launches into space to save Earth, which is one year from extinction. Could anything else ever be made ...
WO A3 - Semiconductor devices and method of manufacturing...
patents.google.com
A semiconductor device is provided with a drain electrode 22, a semiconductor base plate 32, an electric current regulation layer 42 covering a part of a...
US A1 - Semiconductor device having a vertical type...
patents.google.com
A vertical type MOS field effect transistor has a super junction structure between a source electrode and an N + -type drain region. The super junction...
Sensors and Materials
sensors.myu-group.co.jp
Tetsu Kachi and Tsutomu Uesugi, Evaluation of GaN Substrate for Vertical GaN Power Device Applications, Sens. Mater., Vol. 25, No. 3, 2013, p
Franz-Keldysh effect in GaN p-n junction diode under high reverse...
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X-MOL提供的期刊论文更新，Applied Physics Letters——Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage，Takuya Maeda, Tetsuo Narita, Masakazu...
Toyota Central R&D Labs., Inc. / Technical Journal R&D Review
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TOYOTA CRDL, INC., in cooperation with the Toyota Group and research organizations in the world, carries out extensive research into automobile related...
IEICE Technical Report, vol 115, no 331, 2015
www.ieice.org
Naoki Sawada (Kyoto Univ.), Tetsuo Narita, Tetsu Kachi, Tsutomu Uesugi (TOYOTA Central R&D Labs.), Masahiro Horita, Jun Suda (Kyoto Univ.) pp
Uesugi, JP - Patent applications
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Uesugi, JP Akio Uesugi, Haibara-Gun JP. Patent application number ... Patent applications by Tsutomu Uesugi, Aichi-Ken JP. Tsutomu Uesugi, Seto-Shi JP.
MWE : Technical Program : Workshop
www.apmc-mwe.org
5. Possibility of GaN Power Devices for Future Power Electronics Tsutomu Uesugi (豊田中央研究所 パワーデバイス研究室) ...
Planet Analog - Busy Blogger - GaN: The high frequency substrate...
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... the Future GaN Power Devices for Automotive Applications, Lateral Structures or Vertical Structures? by: Tsutomu Uesugi and Tetsu Kachi).
Automotive Applications of GaN Power Devices
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Automotive Applications of GaN Power Devices. more. less. Tetsu Kachi, Masakazu Kanechika, Tsutomu Uesugi · Details · Authors · Bibliography · Quotations ...
Call for paper ASVSJ53 Home
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... Institute for Materials Science (NIIMS)): Application of diamond to Power Electronics; Tsutomu Uesugi (Toyota Central R&D Labs., Inc. Power Device Lab.) ...
Uesugi - Patent applications
www.patentsencyclopedia.com
Tsutomu Uesugi, Nagakute-Shi JP. Patent application number, Description, Published , SEMICONDUCTOR DEVICE - A semiconductor device is ...
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2 - LETTERS
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... Narumasa Soejima, Osamu Ishiguro, Masakazu Kanechika, Kenji Itoh, Hiroyuki Ueda, Tsutomu Uesugi, and Tetsu Kachi PP (3) $$ LA eng TE Epitaxial ...
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