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Tekijähaun tulokset
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Interests
Timo Hatanpää - Patents
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Recent bibliographic sampling of Timo Hatanpää patents listed/published in the public domain by the USPTO (USPTO Patent Application #,Title): ...
Viljami PORE - Patents
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Inventors: Viljami Pore, Timo Hatanpää, Mikko Ritala, Markku Leskelä (Asm International N.v.) Synthesis and use of precursors for ald ...
Business Profiles
Researchgate: Timo Hatanpää
Helsinki, Finland
Timo HATANPÄÄ | University of Helsinki, Helsinki | HY ...
www.researchgate.net
Timo Hatanpää [...] Sami Hietala Colloidal stability of negatively charged nanodiamonds (ND) has been realized with the help of double hydrophilic block copolymers poly (ethylene oxide)-block-poly...
Books & Literature
Timo Hatanpää | XanEdu Customization Platform
www.academicpub.com
The Use of Disaccharides in Inhibiting Enzymatic Activity Loss and Secondary Structure Changes in Freeze-Dried β-Galactosidase during Storage.
Related Documents
Bimetallic oxide compositions for gate dielectrics - LSI Logic...
www.freepatentsonline.com
In one embodiment, bimetallic oxide compositions for gate dielectrics that include two or more of the elements Ca, Sr, Ba, Hf, and Zr are described.
2D Materials - AVS
www.avs.org
Efficient SERS substrates by combining PEALD silver with electrospun fibers. Presented by: Eero Santala, Maarit Kariniemi, Timo Hatanpää, Jaakko Niinistö, ...
Workshop - ALD 2014
www.ald2014.org
Workshop, Hotel Granvia Kyoto 3F, Genji-Ballroom North ... Tiina Sarnet, Timo Hatanpää, Mikko Ritala, Markku Leskelä, Kenichiro Mizohata, Timo ...
VOLATILE Mg(thd)2ETHYLENEDIAMINE AND Mg(thd)2DIETHANOL AT 193 K
www.xray.cz
VOLATILE Mg(thd)2ETHYLENEDIAMINE AND Mg(thd)2DIETHANOL AT 193 K. Jarno Kansikas, Timo Hatanpää, Ilpo Mutikainen and Markku Leskelä. Department of Chemistry, Laboratory of Inorganic Chemistry, University of Helsinki, POBox 55, FIN University of Helsinki, Finland, E-mail: kansikas@ penger.helsinki.fi.
Publications
Crystal structures and thermal properties of some rare earth...
link.springer.com
Crystal structures and thermal properties of some rare earth alkoxides with tertiary alcohols. Timo Hatanpää,; Kaupo Kukli,; Mikko Ritala, ...
The Use of Disaccharides in Inhibiting Enzymatic Activity Loss and...
link.springer.com
The purpose of this study is to show how disaccharides differ in their ability to protect lyophilized β-galactosidase from enzymatic activity loss and
Reports & Statements
BALD Engineering - Born in Finland, Born to ALD: ALD of III/V...
www.blog.baldengineering.com
Tiina Sarnet, Timo Hatanpää, Mikko Laitinen, Timo Sajavaara, Kenichiro Mizohat, Mikko Ritala and Markku Leskelä J. Mater. Chem. C,
BALD Engineering - Born in Finland, Born to ALD: Recent metal oxide...
www.blog.baldengineering.com
Jere Tupala, Marianna Kemell, Miika Mattinen, Kristoffer Meinander, Sanni Seppälä, Timo Hatanpää, Jyrki Räisänen, Mikko Ritala and Markku Leskelä | Read More. Atomic layer deposition of molybdenum oxide using bis(tert- butylimido)bis(dimethylamido) molybdenum. Adam Bertuch, Ganesh Sundaram, ...
Miscellaneous
Timo Hatanpää - Google Scholar
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Timo Hatanpää. University of Helsinki. Verified email at helsinki.fi. ALD precursor chemistry. Articles Cited by Public access. Title. Sort. Sort by citations Sort ...
Timo Hatanpää | LinkedIn
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EP A4 - Synthèse et utilisation de précurseurs pour l ald de...
patents.google.com
Inventeurs, Viljami Pore, Timo Hatanpää, Mikko Ritala, Markuu Leskela. Déposant, Asm Int. Exporter la citation, BiBTeX, EndNote, RefMan. Classifications (21) ...
WO A3 - Synthesis and use of precursors for ald of group va...
patents.google.com
Inventors, Viljami Pore, Timo HATANPÄÄ, Mikko Ritala, Markku Leskelä. Applicant, Asm International N.V., Asm America Inc. Classifications ...
US B1 - Method for growing oxide thin films containing barium...
patents.google.com
The present invention relates to a method for growing oxide thin films which contain barium and/or strontium. According to the method, such thin films...
Timo Hatanpää Helsingfors universitet forskningsportal -...
researchportal.helsinki.fi
Timo Hatanpää. Person. Översikt Publikationer Forskningsområden Kemi; Stäng. Mer... Nyaste publikationer. Bismuth iron oxide thin films using atomic layer ...
Timo Hatanpää — University of Helsinki
researchportal.helsinki.fi
Timo Hatanpää. Person. Overview Publications Research areas Chemical sciences; Close. More... Latest publications. Atomic Layer Deposition of Metal …
Timo Hatanpää | University of Helsinki - Academia.edu
helsinki.academia.edu
Academia.edu is a place to share and follow research.
US B2 - Process for producing bismuth-containing oxide films...
patents.google.com
A process for producing bismuth-containing oxide thin films by Atomic Layer Deposition, including using an organic bismuth compound having at least one...
EP A4 - Synthese und verwendung von vorläufern für...
patents.google.com
Inventors, Viljami Pore, Timo Hatanpää, Mikko Ritala, Markuu Leskela. Applicant, Asm Int. Export Citation, BiBTeX, EndNote, RefMan. Classifications (21), Legal ...
US B2 - Methods for forming thin films comprising tellurium...
patents.google.com
Methods for controllably forming Sb—Te, Ge—Te, and Ge—Sb—Te thin films are provided. ALD processes can be used to deposit a first film comprising ZnTe....
Timo Hatanpää — Helsingin yliopisto
researchportal.helsinki.fi
Titanium alkylphosphate functionalised mesoporous silica for enhanced uptake of rare-earth ions · Zhang, W., Avdibegovic, D., Koivula, R., Hatanpää, T., Hietala, S., Regadio, M., Binnemans, K. & Harjula, R. 7 joulukuuta julkaisussa : Journal of Materials Chemistry. A. 5, 45, s Sivumäärä.
Alkylsilyl compounds as enablers of atomic layer deposition: analysis...
pubs.rsc.org
Tiina Sarnet, Timo Hatanpää, Mikko Laitinen, Timo Sajavaara, Kenichiro Mizohata, Mikko Ritala and Markku Leskelä J. Mater. Chem. C, 2016, 4, DOI:
Atomic layer deposition literature review – Appropedia
www.appropedia.org
Atomic layer deposition literature review. From Appropedia. Jump to: navigation, ... ↑ Pore, Viljami, Timo Hatanpää, Mikko Ritala, and Markku Leskelä.
WO A3 - Synthesis and use of precursors for ald of tellurium...
patents.google.com
Inventors, Viljami Pore, Timo HATANPÄÄ, Mikko Ritala, Markku Leskela. Applicant, Asm International N.V., Asm America, Inc. Export Citation, BiBTeX, EndNote, ...
US B1 - Bimetallic oxide compositions for gate dielectrics...
patents.google.com
In one embodiment, bimetallic oxide compositions for gate dielectrics that include two or more of the elements Ca, Sr, Ba, Hf, and Zr are described....
3. Nanopinta - an affordable and open ALD platform, Dr Tapani...
docplayer.net
Studies of possible germanium precursors for ALD of GST and related materials, Mr. Timo Hatanpää, University of Helsinki, Finland 63. Properties of nanocrystalline n-zno films deposited by ALD onto p-si(100), Prof Viktor Drozd, St . Petersburg State University, Russia 64. Comparison of precursors for ALD of antimony oxide ...
Ancillary Ligand Effect on the Properties of “Mg(thd)2” and Crystal...
figshare.com
... [Mg(thd)2(tmeda)], and [Mg(thd)2(trien)] , 16:00 by Timo Hatanpää Jarno Kansikas Ilpo Mutikainen Markku Leskelä. Complexes [Mg(thd)2 (A)] (Hthd = 2,2,6,6-tetramethyl-3,5-heptanedione; A = ethylenediamine, en (2); N ,N'-dimethylethylenediamine, dmeda (3); N,N'-diethylethylenediamine, deeda (4); N,N,N' ...
Journal de Physique IV
jp4.journaldephysique.org
Journal de Physique IV, Journal de Physique Archives représente une mine d informations facile à consulter sur la manière dont la physique a été publiée depuis...
Growth of SrTiO3 and BaTiO3 Thin Films by Atomic Layer Deposition
esl.ecsdl.org
Timo Hatanpää, ... and thin films were deposited by atomic layer deposition making use of a novel class of strontium and barium precursors, i.e. ...
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