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patentbuddy: Tetsuya Takami
MITSUBISHI DENKI KABUSHIKI KAISHA, Tokyo, JP
Education
IEICE SEARCH SYSTEM
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Morishige HIEDA. †a), Tetsuya TAKAMI. ††. , and Tadashi TAKAGI. †. , Regular Members. SUMMARY. A 270GHz-band image rejection SIS mixer is developed.
Celebrities & Politicians
IMDB Filmography: Tetsuya Takami - IMDb
Tetsuya Takami, Art Director: Kôshoku genpei emaki
Books & Literature
Advances in Superconductivity IV: Proceedings of the 4th...
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Five years have passed since the breakthrough in the critical temperature for superconductors. During this period, many superconducting materials have been...
Advances in Superconductivity V: Proceedings of the 5th International...
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Much progress and important results were reported in all research fields: Chemistry, Flux Pinning, Wires, Tapes and bulk, Thin films, device applications, and...
Advances in Superconductivity VII: Proceedings of the 7th...
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Cox DE, Sleight AW (1976) Solid State Commun. 19:969. : : Substrates Masayuki Kataoka, Ken'ichi Kuroda, Tetsuya Takami, Kumi Teradal, Junji
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Scientific Publications
Tetsuya Takami - …
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View Tetsuya Takami's professional profile. Publications: 28 | Citations: 20 | G-Index: 3 | H-Index: 3. Interests: Chemical Physics & Material Physics, Condensed ...
Observation of two in-plane epitaxial states in (001) Bi2Sr2CaCu2Ox...
www.sciencedirect.com
Observation of two in-plane epitaxial states in (001) Bi 2 Sr 2 CaCu 2 O x films ... Mg0 Masayuki Kataoka a, Ken'ichi Kuroda a, Yuzuru Maki Tetsuya Takami $, Junji ...
Publications
Crystal Orientation Control of BiSrCaCuO Thin Films — A (01n)...
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Crystal Orientation Control of BiSrCaCuO Thin Films — A (01n) Oriented Film on a CeO 2 Buffer Layer. Junji Tanimura, ... Tetsuya Takami, Kazuyoshi Kojima,
Artificial Grain Boundary in BiSrCaCuO Films | SpringerLink
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Editor Affiliations. 1. School of Engineering, Nagoya University; 2. Superconductivity Research Laboratory, ISTEC. Authors. Tetsuya Takami (3); Ken'ichi Kuroda ...
Dry Etching of BiSrCaCuO Thin Films using C2H6 and O2 | SpringerLink
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Reactive ion etching of BiSrCaCuO superconducting thin films was performed by using ethane and oxygen. This etching technique caused little damage to the...
Miscellaneous
DE A The apparatus for forming a thin film using a laser...
patents.google.com
Kenyu Haruta, Koichi Ono, Hitoshi Wakata, Mutsumi Tsuda, Yoshio Saito, Keisuke Nanba, Kazuyoshi Kojima, Tetsuya Takami, Akihiro Suzuki, Tomohiro Sasagawa,
US A - Thin film forming apparatus using laser
patents.google.com
Inventors, Kenyu Haruta, Koichi Ono, Hitoshi Wakata, Yoshio Saito, Kazuyoshi Kojima, Tetsuya Takami, Akihiro Suzuki, Yukihiko Wada. Original Assignee ...
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2 - LETTERS
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... Tetsuya Takami, Kenichi Kuroda andTatsuo Ozeki PP L725-L727 $$ LA eng TE Improvement in Ba_{1-x}K_{x}BiO_{3} Grain Boundary Junctions by Ar^{+}
Takami, Tokyo - Patent applications
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Tetsuya Takami, Tokyo JP. Patent application number Description Published; : SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In a MOSFET using SiC
WO A1 - Semiconductor device and method for manufacturing...
patents.google.com
[PROBLEMS] In the case of forming a p-type base region and an n-type source region by self alignment in an MOSFET using SiC, when a channel is...
US A - Process of making high Tc Josephson junction device...
patents.google.com
A desired pattern is formed on a non-superconducting oxide film after the non-superconducting oxide film has been formed on a magnesia substrate. A...
US B2 - Power semiconductor device having raised channel and...
patents.google.com
In a MOSFET using SiC a p-type channel is formed by epitaxial growth, so that the depletion layer produced in the p-type region right under the channel...
Tetsuya name
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... Tetsuya Tanizawa 3; Tetsuya Tanaka 3; Tetsuya Tamai 3; Tetsuya Tamada 3; Tetsuya Takeshi 3; Tetsuya Takeda 3; Tetsuya Takami 3; Tetsuya Tachibana
takami-t.com Site and Domain Review | slinqs!
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JJAP ONLINE : Table of Contents
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Ken'ichi Kuroda, Yukihiko Wada, Tetsuya Takami and Tatsuo Ozeki Magnetism L1009-L1011 : Magnetoresistance Effect of Co/AlO x /NiFe/Au/n-Si Diode Structure
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