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Takuya KOKAWA - Patents
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Recent bibliographic sampling of Takuya KOKAWA patents listed/published in the public domain by the USPTO (USPTO Patent Application #,Title): ...
Advanced patent inventors (2013)
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Tadahiro Ohmi · Tadashi Kokubo · Tae-gil Kang · Takahiro Harada · Takashi Kizuki · Takehiko Nomura · Takuya Kokawa · Takuya Kokawa · Tapan Desai.
Business Profiles
patentbuddy: Takuya Kokawa
THE FURUKAWA ELECTRIC CO., LTD., Tokyo, JP
Books & Literature
Electrical and optical properties of GaN studied by surface ...ur.booksc.org › book
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... and current collapse suppression for high power AlGaN/GaN HFETs on Si substrates · Nariaki Ikeda, Shusuke Kaya, Takuya Kokawa, Sadahiro Kato. سال:.
Related Documents
EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR ELEMENT, SEMICONDUCTOR ELEMENT,...
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Provided is a semiconductor device of normally-off operation type having a low on-resistance. An epitaxial substrate for semiconductor device includes: a base...
(PDF) High power AlGaN/GaN HFETs on 4 inch Si substrates - PDFSLIDE.US
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© WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim p s s current topics in solid state physics c st a tu s so li d i www.pss-c.comp h y si caPhys. Status Solidi...
Coupled heterogeneous devices for pH sensing - The Board of Trustees...
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Provided herein are methods and devices for measuring pH and for amplifying a pH signal to obtain ultrasensitive detection of changes in pH. This is achieved...
Scientific Publications
High field-effect mobility normally-off AlGaN/GaN hybrid MOS-HFET on...
www.sciencedirect.com
High field-effect mobility normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate by selective area growth ... Takuya Kokawa, Nariaki Ikeda, Takehiko ...
Solid-State Electronics | Vol 54, Issue 6, Pages (June www.sciencedirect.com › journal › solid-state-electronics › vol › issue
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Hiroshi Kambayashi, Yoshihiro Satoh, Shinya Ootomo, Takuya Kokawa, ... Tat-sing Pawl Chow. Pages : Download PDF. Article preview. select article ...
Reports & Statements
What fights are we missing? | Page 35 | EYE ON THE RING
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We're still filling the Fight Vault... what are our obvious omissions?
Miscellaneous
US B2 - Coupled heterogeneous devices for pH sensing ...patents.google.com › patent
patents.google.com
[13] Takuya Kokawa, Taketomo Sato, Hideki Hasegawa, and Tamotsu Hashizume, J. Vac. Sci. Technol. B 24, pp (2006). [14] G. Steinhoff, M.
US A1 - Semiconductor device and method for manufacturing...
patents.google.com
Inventores, Takuya Kokawa, Sato Yoshihiro, Kato Sadahiro, Iwami Masayuki. Beneficiário Original, Furukawa Electric Co., Ltd. Exportar citação, BiBTeX ...
US A1 - Field effect transistor Google Patents
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A field effect transistor includes: a buffer layer that is formed on a substrate; a high resistance layer or a foundation layer that is formed on the...
Pongsaklek Vs Takuya kokawa @ พงศักดิ์เล็ก ไก่ย่างห้าดาว Music Jinni
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▶View and download Pongsaklek Vs Takuya kokawa พงศักดิ์เล็ก ไก่ย่างห้าดาวยิม Vs ทาคุยะ โคกาว่า R1 in HD Video or Audio for free.
Pongsaklek Vs Takuya kokawa @ พงศักดิ์เล็ก ไก่ย่างห้าดาวยิม Vs ทาคุยะ...
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WBC Defending flyweight champion Pongsaklek (Thai)Vs Takuya kokawa (Japan) พงศักดิ์เล็ก ไก่ย่างห้าดาวยิม Vs ทาคุยะ โคกาว่า ป้องกัน แชมป์โลกรุ่นฟลายเวท ของ WBC 1 กรกฎาคม
US A1 - Field effect transistor, method of manufacturing...
patents.google.com
A field effect transistor includes a high resistance layer on a substrate, a semiconductor operation layer that is formed on the high resistance layer...
US B2 - Semiconductor electronic device having reduced...
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A semiconductor electronic device comprises a substrate; a buffer layer formed on said substrate, having two or more layers of composite layers in which...
▷ Instagram Search - takuyakokawa - Search Instagram Users & Hashtag...
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takuyakokawa - Search Instagram Users & Hashtag & Posts, Instagram Photos and Videos, Discover & Inspiration, Picks the most popular hashtag and interesting...
▷ Takuya Kokawa - @takuyakokawa Instagram following profiles • Pikdo
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Takuya Kokawa - @takuyakokawa Instagram following profiles on Pikdo
21st International Symposium on Power Semiconductor Devices & IC's,...
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Kambayashi, Hiroshi / Satoh, Yoshihiro / Niiyama, Yuki / Takuya Kokawa, / Iwami, Masayuki / Nomura, Takehiko / kato, Sadahiro / Chow, T. Paul |
Kokawa, JP - Patent applications
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Patent application number, Description, Published , PROJECTION DISPLAY DEVICE AND ELECTRONIC DEVICE - A projection display device ...
High field-effect mobility normally-off AlGaN/GaN hybrid MOS-HFET on...
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Hiroshi Kambayashi, Yoshihiro Satoh, Takuya Kokawa, Nariaki Ikeda, Takehiko Nomura, Sadahiro Kato · Details · Contributors · Fields of science · Bibliography ...
SEMICONDUCTOR ELECTRONIC DEVICE - Patent application
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Patent application title: SEMICONDUCTOR ELECTRONIC DEVICE Inventors: Takuya Kokawa (Tokyo, JP) Sadahiro Kato (Tokyo, JP) Yoshihiro Sato (Tokyo, JP ...
IEICE Technical Report, vol 108, no 262, 2008
ken.ieice.org
... AlGaN/GaN HFETs on 4-inch Si substrates. Nariaki Ikeda, Syuusuke Kaya, Jiang Li, Takuya Kokawa, Yoshihiro Sato, Sadahiro Kato (Furukawa Electric) pp.
Over 100A operation normally-off AlGaN/GaN hybrid MOS-HFET on Si...
www.infona.pl
... with high-breakdown voltage. Hiroshi Kambayashi, Yoshihiro Satoh, Shinya Ootomo, Takuya Kokawa, Takehiko Nomura, Sadahiro Kato, Tat-sing Pawl Chow.
[PDF] CONCEPTION D'UN TRANSISTOR VERTICAL DE Savoirs UdeSsavoirs.usherbrooke.ca › handle › Pepin_Marie_Clara_MScA_2018
savoirs.usherbrooke.ca
Aug 10, · [17] Hiroshi Kambayashi, Yoshihiro Satoh, Shinya Ootomo, Takuya Kokawa, Takehiko. Nomura, Sadahiro Kato, and Tat-sing Pawl Chow.
FIELD EFFECT TRANSISTOR - Patent application
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Patent applications by Takuya Kokawa, Tokyo JP. Patent applications by FURUKAWA ELECTRIC CO., LTD. Patent applications in class ...
st International Symposium on Power Semiconductor Devices & IC s ...autodocbox.com › Electric_Vehicle › St-international-symposiu...
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... Takuya Kokawa, Masayuki Iwami, Takehiko Nomura, Sadahiro Kato, Furukawa Electric Co, Ltd; Tat-Sing Chow, Rensselear Polytechnic Institute Normally-Off ...
ken-system: Advance Program MW-ED
ken.ieice.org
(11), 11:00-11:25, AlGaN/GaN HFETs using highly C-doped layers on Si substrate, Takuya Kokawa, Syusuke Kaya, Nariaki Ikeda, Sadahiro Kato (APD). (12), 11:25-11:50, Developing GaN HEMTs for Ka-Band with 20W, Keiichi Matsushita, Hiroyuki Sakurai, Yasushi Kashiwabara, Kazutoshi Masuda, Ken ...
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