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Deeds & Deals - Times Union
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Srikanth Samavedam and Gauri Karve bought property on 16 Windmill Way from Robert Eberle and Cheryl Eberle for $435,000.
Telephone & Addresses
Srikanth Samavedam, West Lafayette, S Salisbury St
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Srikanth B Samavedam, 45, Cohoes, Windmill Way
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People in Fishkill, NY From Richard Rosario - Jennifer Rosenberg to ...
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... Susan Salomone - Joseph Samanna · Srikanth Samavedam - Dianna Sanchez · Eladia Sanchez - Joseph Sandford · Mildred Sandford - Michael Sanjek ...
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Srikanth B Samavedam. Cohoes, NY. View Address More. Srikanth B Samavedam years old. Fishkill, NY. View Address & Phone Number Was in Cambridge, MA and 3 other
Network Profiles
Srikanth Sam | Wer ist das? Informationen zu diesem Namen
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Wer ist eigentlich Srikanth Sam? Profile, Fotos, Webseiten, Firmen und mehr finden Sie bei Wer-ist.org
Interests
Srikanth B. Samavedam - Patents
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Srikanth B. Samavedam patents Recent bibliographic sampling of Srikanth B. Samavedam patents listed/published in the public domain by the USPTO (USPTO Patent
Srikanth B Samavedam, Inventor, Fishkill, NY
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Srikanth B Samavedam's Inventor profile, Cohoes, NY, US, GLOBALFOUNDRIES INC.;, 56 patents/applications from Feb 27, to Apr 14, 2015, forward patent...
Srikanth SAMAVEDAM - Patents
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Recent bibliographic sampling of Srikanth SAMAVEDAM patents listed/published in the public domain by the USPTO (USPTO Patent Application #,Title):
Business Profiles
patentbuddy: Srikanth B Samavedam
FREESCALE SEMICONDUCTOR, INC., Fishkill, NY, US
MIT Reports to the President web.mit.edu › annualreports › pres98 › html
web.mit.edu
The chairman of the the MIT Student Chapter of the Materials Research Society during the academic year was Srikanth Samavedam. New officers for ...
Reports to the President
web.mit.edu
Other officers during academic year were: Valarie Benezra (Treasurer), Srikanth Samavedam and T.A. Venkatesh (MESSeminar Co-Chairs), Nicole ...
Music
Full text of "DTIC ADA : Materials Research Society Symposium...
archive.org
Yonenaga Influence of Substrate Off-Cut on the Defect Structure in Relaxed Graded Si-Ge/Si Layers.343 Srikanth B. Samavedam, F. Romanato, M.S. Goorsky, ...
Related Documents
Reduction of dislocation pile-up formation during relaxed...
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A semiconductor structure including a cap layer formed over a semiconductor substrate having a rough edge, which discourages formation of dislocation pile-up...
Inventor list - AMiner
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... Wess Robert P. Cloutier John R. Fredlund Ramachandran Muralidhar Sucharita Madhukar Bo Jiang Bruce E. White Srikanth B. Samavedam David L. O Meara ...
JEM Abstracts: November TMS
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SRIKANTH B. SAMAVEDAM,1 ERIC P. KVAM,1 ABULE E. KLABIR,2 and GEROLD W. NEUDECK2 1--School of Materials Engineering, Purdue University, West ...
Глава 4edu.znate.ru › tw_files › 4.pdf
edu.znate.ru
Srikanth B. Samavedam, E. A. Fitzgerald, “Novel dislocation structure and surface morphology effects in relaxed Ge/Si-Ge(graded)/Si structures”, J. appl. phys.,.
Scientific Publications
materials, thermocouple caliberation
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Srikanth B. Samavedam . Tue, 21 Jan :52:53 GMT # thermocouple caliberation. Fri, 19 Jun :00:00 GMT: DLNeim # thermocouple caliberation.
Publications
Growth and characterization of high quality relaxed graded silicon...
core.ac.uk
Abstract. by Srikanth B. Samavedam.Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, Includes bibliographical references (leaves )
Dislocations in strained layers: The Ge-Si system | SpringerLink
link.springer.com
The Ge-Si on Si epilayer system, besides being an interesting technological system in its own right, is a superb model for strained-layer studies. The poin
Defect structures in silicon merged epitaxial lateral overgrowth |...
link.springer.com
Srikanth B. Samavedam (1); Eric P. Kvam (1); Abul E. Kabir (2); Gerold W. Neudeck (2). Author Affiliations. 1. School of Materials Engineering, Purdue University, ...
Video & Audio
Srikanth Samavedam - YouTube
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Srikanth Samavedam. SubscribeSubscribedUnsubscribe 0. Loading... Loading... Working... Language: English; Location: United States; Restricted Mode: Off.
YouTube
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Rajshri Marathi is the first Marathi YouTube channel that offers a gamut of entertainment options such as the latest filmy updates, celebrity gossip, entertainment ...
Reports & Statements
[Assam] AID spirit at the Freescale Marathon
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Begin Message --- AID spirit at the Freescale Marathon Srikanth Samavedam As bitter cold and freezing rain confined most Austinites to warm
Miscellaneous
WO A2 - Semiconductor device and a …
patents.google.com
Srikanth B. Samavedam Philip J. Tobin William J. Taylor, Jr. Original Assignee Motorola, Inc. Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date
US A1 - Semiconductor structures employing strained...
patents.google.com
(See, e.g., Srikanth Samavedam et al., Journal of Applied Physics, Vol. 81, No. 7, 1997, incorporated herein by reference.) A high density of misfit dislocations in ...
US A1 - Method for forming a monolithic thin-film...
patents.google.com
Inventors, Tat Ngai, Srikanth Samavedam, Uttam Ghoshal. Original Assignee, Nanocoolers, Inc. Export Citation, BiBTeX, EndNote, RefMan. Referenced by (10) ...
Srikanth B Samavedam - Bing 学术
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Srikanth B. Samavedam 1 and E. A. Fitzgerald 1. Scitation Author Page. PubMed. Google Scholar. View Affiliations Hide Affiliations. Affiliations: 1 Department of .
Srikanth B Samavedam in Fishkill, NY - Listing Details - The Official...
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Srikanth B Samavedam is located in Fishkill NY according to public information records. First Name, Phone Number, Name Origin and Meaning for the person...
US A1 - Semiconductor device having a metal carbide gate...
patents.google.com
A semiconductor device structure is formed over a semiconductor substrate and has a gate dielectric over the semiconductor substrate and a gate over the...
US A1 - Method of tailoring silicon trench profile for...
patents.google.com
A methodology is disclosed enabling the formation of silicon trench profiles for devices, such as SSRW FETs, having a resultant profile that enables...
WO A2 - Procede de formation d'un transistor nmos et ...
patents.google.com
Other languages: English; Inventor: Srikanth B. Samavedam: James K. Schaeffer, Iii: Philip J. Tobin: Bikas Maiti: Joseph C. Mogab; Original Assignee: Freescale ...
Srikanth B. Samavedam, Fishkill US - Patent applications
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, METHOD FOR FORMING A DUAL METAL GATE STRUCTURE - A method for forming a semiconductor structure includes forming a channel ...
US B2 - Semiconductor heterostructures having reduced...
patents.google.com
Dislocation pile-ups in compositionally graded semiconductor layers are reduced or eliminated, thereby leading to increased semiconductor device yield...
US A1 - Method of forming an NMOS transistor and structure...
patents.google.com
Inventeurs, Srikanth Samavedam, James Schaeffer, Philip Tobin, Bikas Maiti, Joseph Mogab. Cessionnaire d'origine, Samavedam Srikanth B., Schaeffer James ...
EP A2 - Semiconductor heterostructures having reduced...
patents.google.com
Dislocation pile-ups in compositionally graded semiconductor layers are reduced or eliminated, thereby leading to increased semiconductor device yield and...
ANALOG NEWSLETTER - ewh.ieee.org
ewh.ieee.org
They are: Artyom M. Grigoryan, Srikanth B. Samavedam, and Joe B. Scrivner, Jr. Dr. Ray T. Chen, University of Texas, Austin, was elevated to IEEE/Lasers and Electro-Optics Society Fellow Status at the Optical Fiber Conference, February , in Los Angeles, CA. Dr. Chen was nominated for contributions to polymer-based guided devices for ...
US A1 - Methods of forming replacement gate structures with...
patents.google.com
Disclosed herein are various methods of forming replacement gate structures with a recessed channel region. In one example, the method includes forming a...
US A1 - Reduction of dislocation pile-up formation ...
patents.google.com
Dislocation pile-ups are formed as follows. (See, e.g., Srikanth Samavedam et al., [0014] Journal of Applied Physics, Vol. 81, No. 7, 1997, incorporated herein by ...
WO B1 - Dispositif thermoelectrique monobloc a couche ...
patents.google.com
Application filed by Nanocoolers Inc, Uttam Ghoshal, Srikanth Samavedam, Tat Ngai, Andrew Carl Miner Publication of WO A1.
Comparing SOI and bulk FinFETs: Performance, …
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Horacio Mendez, SOI Industry Consortium, Austin, Texas, USA; David M. Fried, IBM, East Fishkill, NY USA; Srikanth B. Samavedam, Freescale Semiconductor, East Fishkill, NY USA; Thomas Hoffmann, IMEC, Leuven, Belgium; Bich-Yen Nguyen, Soitec,Austin, Texas, USA. As the semiconductor industry looks toward the 22nm technology node, some manufacturers are considering a transition from planar …
Sung Kyu Lim | Nanoscale Com…ng Fabrics Lab | UMass Amherst
www.umass.edu
A 14nm FinFET transistor-level 3D partitioning design to enable high-performance and low-cost monolithic 3D IC · JiaJun Shi, Deepak Nayak , Srinivasa Banna, ...
Symposium H | MRS Fall Meeting | Boston
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Srikanth B. Samavedam, Matthew T. Currie, Thomas A. Langdo, Steve M. Ting, Eugene A. Fitzgerald, MIT, Dept. of Materials Science and Engineering, Cambridge, MA. Germanium (Ge) photodiodes are capable of high quantum yields and can operate at gigahertz frequencies in the m wavelength regime. The compatibility of Si-Ge alloys with Si ...
DSpace@MIT: Growth and characterization of high...
dspace.mit.edu
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