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Dong Seup Lee | XanEdu Customization Platform

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... and get permission directly. Author: Dong Seup Lee. Results. Joung-Eob Lee Dong Seup Lee; Kwon-Chil Kang; Sangwoo Kang; Jung Fay, P Kopp, D.; Shiping Guo; Xiang Gao; Dong Seup Lee; Palacios, T

Delay Analysis of Graphene Field-Effect Transistorsarxiv.org › cond-mat

arxiv.org

Dec 20, · ... Graphene Field-Effect Transistors. Authors:Han Wang, Allen Hsu, Dong Seup Lee, Ki Kang Kim, Jing Kong, Tomas Palacios · Download PDF.

GaN high electron mobility transistors for sub-millimeter wave ...adsabs.harvard.edu/abs/2014JaJAP..53j0212S

ui.adsabs.harvard.edu

Seup Lee, Dong; Liu, Zhihong; Palacios, Tomás. Affiliation: AA(Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA ...

[ ] Delay Analysis of Graphene Field-Effect Transistors

arxiv.org

Han Wang, Allen Hsu, Dong Seup Lee, Ki Kang Kim, Jing Kong, Tomas Palacios. In this letter, we analyze the carrier transit delay in graphene ...

Triple tooth AlGaN/GaN HEMT on SiC substrate: A novel structure for...

link.springer.com

Jul 4, · Seup Lee, X. Gao, S. Guo, D. Kopp, P. Fay and T. Palacios, IEEE Electron Device Lett. 32, (2011).

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AlGaN/GaN High-Electron-Mobility Transistors Fabricated Through a...

www.infona.pl

Hyung-Seok Lee, Dong Seup Lee, Palacios. Treść / Zawartość . Warianty tytułu. Języki publikacji. Abstrakty. This letter reports undoped AlGaN/GaN high-electron-mobility transistors (HEMTs) fabricated with a Si-CMOS-compatible technology based on Ti/Al/W ohmic and Schottky contacts. The use of ohmic recess is key to reduce the contact resistance of this Au-free metallization below 0.5 Ω ...

NSF Award Search: Award# CAREER: Terahertz ...

nsf.gov

Dong Seup Lee, Allen Hsu, Oleg Laboutin, Yu Cao, Wayne Johnson, Edward Beam, Andrew Ketterson, Michael Schuette, Paul Saunier, and Tomás Palacios. "Nanowire Channel InAlN/GaN HEMTs With High Linearity of gm and ft," IEEE Electron Device Letters, v.34, 2013, p

Диссертация на тему «Конструкции и технология СВЧ GaN транзисторов...

www.dissercat.com

Hyung-Seok Lee, Dong Seup Lee, Tomas Palacios // IEEE ELECTRON DEVICE LETT., V. 32, NO. 5, p F. Medjdoub, M. Zegaoui, D. Ducatteau et ...

Приборно-технологическое моделирование и наноэлектронике

nanolab.gu-unpk.ru

InAlN/GaN HEMTs with AlGaN back barriers / Dong Seup Lee, Xiang Gao, Shiping Guo, T. Palacios //. IEEE Electron Device Letters Vol.

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