Mahalingam Nandakumar - Free People Check with News, Pictures & Links

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Mahalingam M Nandakumar, 51, Dallas, US, Maham Rd, Apt 323

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Mahalingam M Nandakumar, 51, Dallas, US, N Central Expy

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Mahalingam M Nandakumar, 51, Plano, US, W Spring Creek Pkwy, Apt 707

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Mahalingam M Nandakumar, 50, Richardson, US, Dove Creek Ln

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Interests

Texas Instruments Assigned Patent for Carbon and Nitrogen Doping for...

www.tmcnet.com

Texas Instruments Assigned Patent for Carbon and Nitrogen Doping for Selected PMOS Transistor on Integrated Circuit

Scientific Publications

dblp: ISQED 2002

dblp.uni-trier.de

Bibliographic content of ISQED 2002

Miscellaneous

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US B2 - Dopant implantation method using multi-step implants...

patents.google.com

A method of forming a dopant implant region in a MOS transistor device having a dopant profile having a target dopant concentration includes implanting a...

US B2 - Semiconductor structure and method of fabrication...

patents.google.com

A semiconductor structure includes a first PMOS transistor element having a gate region with a first gate metal associated with a PMOS work function and...

Dallas Invents: 137 Patents Granted for Week of Oct. 30 » Dallas...

dallasinnovates.com

Patents granted include Futurewei’s rotatable, panoramic camera for mobile devices; Nokia’s group messaging apparatus within a communication network; and...

US A1 - Additional n-type LDD/pocket implant for improving...

patents.google.com

A short-channel NMOS transistor in a p-well, bordered laterally on each side by an isolation region and vertically by a channel stop region, has a...

US B1 - High performance lateral bipolar transistor

patents.google.com

A lateral bipolar transistor includes an emitter region, a base region, a collector region, and a gate disposed over the base region. A bias line is...

US A - Integrated multicelled semiconductor switching device...

patents.google.com

An integrated multicelled thyristor includes a plurality of main thyristor cells and a plurality of edge thyristor cells. The main thyristor cells...

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Mahalingam Nandakumar Free People Check

Images of Mahalingam Nandakumar

News

Telephone & Addresses

Mahalingam M Nandakumar, 51, Dallas, US, Maham Rd, Apt 323

Mahalingam M Nandakumar, 51, Dallas, US, N Central Expy

Mahalingam M Nandakumar, 51, Plano, US, W Spring Creek Pkwy, Apt 707

Mahalingam M Nandakumar, 50, Richardson, US, Dove Creek Ln

Interests

Texas Instruments Assigned Patent for Carbon and Nitrogen Doping for...

Related Documents

dblp: Song Zhao

Scientific Publications

dblp: ISQED 2002

Miscellaneous

US B2 - Dopant implantation method using multi-step implants...

US B2 - Semiconductor structure and method of fabrication...

Dallas Invents: 137 Patents Granted for Week of Oct. 30 » Dallas...

US A1 - Additional n-type LDD/pocket implant for improving...

US B1 - High performance lateral bipolar transistor

US A - Integrated multicelled semiconductor switching device...