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	Tabrīz

	Communications Emmanouil Dimakis Harald Schneider Manfred Helm Alexej Pashkin Ivan Fotev Rakesh Rana GaAs bandgap via

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News

Laboratory experiments show that semiconductor nanowires can be tuned...

phys.org

· More information: Leila Balaghi et al, Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch, Nature Communications (2019). DOI: s

Nanowires under tension create the basis for ultrafast transistors

phys.org

· More information: Leila Balaghi et al, High electron mobility in strained GaAs nanowires, Nature Communications (2021). DOI: s z Journal information: Nature Communications

Telephone & Addresses

Widely tunable GaAs bandgap via strain engineering in core ...

ideas.repec.org

Leila Balaghi (Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf Technische Universität Dresden) Genziana Bussone (PETRA III, Deutsches Elektronen-Synchrotron (DESY)) Raphael Grifone (PETRA III, Deutsches …

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Researchgate: Leila Balaghi

Tabrīz, East Azerbayjan, Iran

Books & Literature

High electron mobility in strained GaAs nanowires – DOAJ

doaj.org

Semiconductor nanowires are promising candidates for the realization of novel transistor concepts. Here, the authors demonstrate that electron mobility in

Publications

EconPapers: High electron mobility in strained GaAs nanowires

econpapers.repec.org

By Leila Balaghi, Si Shan, Ivan Fotev, Finn Moebus, Rakesh Rana, Tommaso Venanzi, René Hübner, Thomas Mikolajick, Harald Schneider, Manfred Helm, Alexej Pashkin and Emmanouil Dimakis; Abstract: Abstract Transistor concepts based on semiconductor nanowires promise high performance, lower energy consumption and

EconPapers: Widely tunable GaAs bandgap via strain engineering in...

econpapers.repec.org

By Leila Balaghi, Genziana Bussone, Raphael Grifone, René Hübner, Jörg Grenzer, Mahdi Ghorbani-Asl, Arkady V. Krasheninnikov, Harald Schneider, Manfred Helm and Emmanouil Dimakis; Abstract: Abstract The realisation of photonic devices for different energy ranges demands materials with different bandgaps,

Reports & Statements

High electron mobility in strained GaAs nanowires | Nature...

www.nature.com

Transistor concepts based on semiconductor nanowires promise high performance, lower energy consumption and better integrability in various platforms in...

Widely tunable GaAs bandgap via strain engineering in core/shell...

www.nature.com

The realisation of photonic devices for different energy ranges demands materials with different bandgaps, sometimes even within the same device. The optimal...

Miscellaneous

leila Balaghi | LinkedIn

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Leila Balaghi - PHD Student - Helmholtz-zentrum Dresden ...

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View Leila Balaghi’s full profile. It's free! Your colleagues, classmates, and 500 million other professionals are on LinkedIn. View Leila’s Full Profile. Leila Balaghi’s Activity.

A 0.6V, 1.3mW CMOS LNA for WLAN Application

civilica.com

نسخه قابل چاپ خلاصه مقاله A 0.6V, 1.3mW CMOS LNA for WLAN Application - گواهی پذیرش مقاله در کنفرانس

International Conference on Ultrafast Phenomena 2020

opg.optica.org

Rakesh Rana, Leila Balaghi, Ivan Fotev, Harald Schneider, Manfred Helm, Emmanouil Dimakis, and Alexej Pashkin Tu4A.45 International Conference on Ultrafast Phenomena (UP) View: PDF Optics-Free Focusing and Application to Spectral Filtering of XUV Beam

Materialforschung preisgekrönt | MFD - Material ...

www.mfd-dresden.com

· Die beiden Doktorandinnen, Himani Arora und Leila Balaghi, vom Helmholtz-Zentrum Dresden-Rossendorf (HZDR) wurden im cfaed-Wettbewerb um das schönste Wissenschaftsbild mit dem ersten und dritten Platz ausgezeichnet. Die Mikroskopieaufnahme der Siegerin, Himani Arora, zeigt elektronische Strukturen aus organischen Halbleiter-Polymeren und filigranen …

Shell increases versatility of nanowires

bioengineer.org

Laboratory experiments show that semiconductor nanowires can be tuned over wide energy rangesCredit: HZDR / R. Huebner Nanowires promise to make LEDs more...

Shell structure increases versatility of GaAs nanowires - News

compoundsemiconductor.net

Our selection of industry specific magazines cover a large range of topics.

Speeding Through Semiconductor Nanowires: New Basis for Ultrafast...

scitechdaily.com

2 dager siden · Reference: “High electron mobility in strained GaAs nanowires” by Leila Balaghi, Si Shan, Ivan Fotev, Finn Moebus, Rakesh Rana, Tommaso Venanzi, René Hübner, Thomas Mikolajick, Harald Schneider, Manfred Helm, Alexej Pashkin and Emmanouil Dimakis, 17 November 2021, Nature Communications. DOI: s z

[PDF] Widely tunable GaAs bandgap via strain engineering ...

www.semanticscholar.org

· DOI: s Corpus ID: ; Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch @article{Balaghi2019WidelyTG, title={Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch}, author={Leila Balaghi and Genziana …

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