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Images of Kazuhiro Ohba
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Kazuhiro Ohba, San Diego, US, Huerfano Ave, Apt 141
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Kazuhiro Ohba - Patents
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Recent bibliographic sampling of Kazuhiro Ohba patents listed/published in the public domain by the USPTO (USPTO Patent Application #,Title):
Business Profiles
patentbuddy: Kazuhiro Ohba
SONY CORPORATION, Miyagi, JP
Related Documents
AOARD REPORT
www.dtic.mil
Tsutomu Nagaoka. Yasuyuki Nakajima. Kazunari Nakane. Yutaka Nakazawa. Geoff Newman. Jun Nishikido. Minoru Nishizaki. Kazuhiro Ohba. Hidenori Okuda.
Video & Audio
YouTube
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kazuhiro ohba - YouTube
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プロフェッショナル仕事の流儀 遠藤保仁 ①
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▶ 15:01プロフェッショナル仕事の流儀 遠藤保仁 ① by kazuhiro ohba. Tags : プロフェッショナル, 仕事の流儀, 遠藤保 ...
nizi - YouTube
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Eingebettetes Video · by kazuhiro ohba 49,666 views. 15:01 Saké - Music de Poete (prod: Nizi) - Duration: 2:33. by MrSoundsDope 136,814 views. 2:33
Reports & Statements
Wikipedia: Japanische Badmintonmeisterschaft – Wikipedia
Kazuhiro Ohba: Damendoppel: Atsuko Tokuda Yoshiko Yonekura: Saori Kondo Mikiko Takada: Kazuko Sekine Sonoe Ohtsuka: Sachiko Akimoto Mitsuyo Tani: Mixed ...
Miscellaneous
WO A2 - Magnetoresistance effect element, magetic memory...
patents.google.com
A magnetoresistance effect element comprising a ferromagnetic tunnel coupling with a tunnel barrier layer sandwiched by at least a pair of ferromagnetic...
MMArmy.com - The Online MMA Game
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Kazuhiro Ohba is a fighter out of Hard Knocks and is sporting a record. His highest rank is #4172.
Kazuhiro Ohba, Miyagi JP - Patent applications
www.patentsencyclopedia.com
Patent application number, Description, Published , MEMORY ELEMENT AND MEMORY DEVICE - A memory element having a storage layer ...
Japanische Badmintonmeisterschaft Wikiwand
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Die Japanische Badmintonmeisterschaft war die 33. Austragung der nationalen Titelkämpfe im Badminton in Japan. Die Meisterschaft wurde in Tokio...
US B2 - Magnetoresistance effect device Google...
patents.google.com
Kazuhiro Ohba: Magnetoresistant device and magnetic memory device further comments: US * 14 Dec 2005: 24 Aug 2006: Sony Corporation ...
US B2 - Method of production of a magnetoresistance effect...
patents.google.com
A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them,...
MEMORY DEVICE AND MEMORY UNIT - Patent application
www.patentsencyclopedia.com
Patent application title: MEMORY DEVICE AND MEMORY UNIT Inventors: Hiroaki Sei (Kanagawa, JP) Hiroaki Sei (Kanagawa, JP) Kazuhiro Ohba (Tokyo, JP) Seiji ...
Ohba, Tokyo - Patent applications
www.patentsencyclopedia.com
Kazuhiro Ohba, Tokyo JP. Patent application number, Description, Published , STORAGE DEVICE AND STORAGE UNIT - A storage device ...
Patent US Memory component and memory device ...
patents.google.com
Uitvinders, Shuichiro Yasuda, Katsuhisa Aratani, Kazuhiro Ohba, Hiroaki Sei. Oorspronkelijke patenteigenaar, Sony Corporation. Citatie exporteren, BiBTeX ...
Visualization of Conductive Filament during Write and Erase Cycles on...
www.infona.pl
Yasuo Takahashi, Masaki Kudo, Ichiro Fujiwara, Masayuki Shimuta, Kazuhiro Ohba, Masashi Arita · Details · Contributors · Bibliography · Quotations · Similar ...
US B2 - Magnetic tunnel junction structure with amorphous...
patents.google.com
US , 11 Oct 2002, 23 Dec 2004, Kazuhiro Ohba, Magnetoresistive effect element, magnetic memory element magnetic memory device and ...
US B1 - High conductivity ground planes for integrated lead...
patents.google.com
An integrated lead flexure or suspension including an insulating layer, a plurality of traces on the insulating layer and a stainless steel base layer on...
Patente US Magnetic memory device and method of ...
patents.google.com
US *, 11 Oct 2002, 23 Dic 2004, Kazuhiro Ohba, Magnetoresistive effect element, magnetic memory element magnetic memory device and ...
US A1 - Magnetoresistance effect device - Google Patents
patents.google.com
US A1 * Kazuhiro Ohba Magnetoresistant device and magnetic memory device further comments. US A1 ...
US B2 - Hafnium doped cap and free layer for MRAM device...
patents.google.com
A high performance MTJ, and a process for manufacturing it, are described. A capping layer of NiFeHf is used to getter oxygen out of the free layer,...
US B2 - Memory element and memory device Google...
patents.google.com
A memory element having a storage layer containing an ion source layer between a first electrode and a second electrode is provided. The memory element...
WO A1 - 記憶素子および記憶装置 Google Patents
patents.google.com
抵抗変化型の記憶装置において、記憶および消去状態の抵抗値の保持能力を向上させる。下部電極１と上部電極４との間に、高抵抗層２およびイオン源層３からなる記憶層５を有する。イオン源層３は、Ｓ（硫黄），Ｓｅ（セレン）およびＴｅ（テルル）（カルコゲナイド元素）などのイオン伝導材料およびＺｒ（ジルコニウム）などのイオン化する金属元...
US A1 - Magnetic tunnel junction device and method of...
patents.google.com
... Kazuhiro Ohba, Magnetoresistive effect element, magnetic memory element ... Kazuhiro Ohba, Magnetoresistant device and magnetic memory device further ...
US A1 - Solid electrolyte battery and method for...
patents.google.com
A solid electrolyte battery includes a battery element in which a cathode having a cathode composite mixture layer formed by applying a cathode composite...
US B2 - Magnetic tunnel junction device Google...
patents.google.com
2004, Kazuhiro Ohba, Magnetoresistive effect element, magnetic memory element ... Juni 2006, Kazuhiro Ohba, Magnetoresistant device and magnetic memory ...
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