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News
IBM triples transistor performance
www.computerweekly.com
IBM researcher Huiling Shang said the company had discovered a way to use germanium to improve the flow of electrons through its transistor.
Telephone & Addresses
Huiling Shang, 42, Bethlehem, US, Johnston Dr
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Huiling Shang, 42, Bethlehem, US, E 5th St
View Huiling's social profiles and photos on Facebook, MySpace, and +40 Networks.
Huiling Shang, 42, Bethlehem, US, E 5th St, Unit 1FL
View Huiling's social profiles and photos on Facebook, MySpace, and +40 Networks.
Huiling Shang, 42, Bethlehem, US, Memorial Dr E
View Huiling's social profiles and photos on Facebook, MySpace, and +40 Networks.
Network Profiles
LinkedIn: Huiling Shang | Professional Profile
View Huiling Shang’s full profile. It's free! Your colleagues, classmates, and 500 million other professionals are on LinkedIn. View Huiling’s Full Profile
Business Profiles
patentbuddy: Huiling Shang
INTERNATIONAL BUSINESS MACHINES CORPORATION, Hopewell Junction, NY, US
ResearchGate
www.researchgate.net
ResearchGate is a network dedicated to science and research. Connect, collaborate and discover scientific publications, jobs and conferences. All for free.
Books & Literature
学术圈– Huiling Shang
www.soscholar.com
Huiling Shang ... Empirical Study of Parking Problem on University Campus · Huiling Shang · Journal of Transportation Systems Engineering and Information ...
Advanced Gate Stacks for High-Mobility Semiconductors - Google Books
books.google.de
This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful...
Istc/cstic (cistc) - Google Books
books.google.de
Symposium I Dr. Shaoning Mei HHNEC, China Dr. Boyong He Shanghai Jiaotong University, China Dr. Huiling Shang IBM, USA Dr. Hong Wu SST, China ...
Simulation of Semiconductor Processes and Devices Google Books
books.google.de
Hole Mobility Enhancement Modeling and Scaling Study for High Performance Strained Ge Buried Channel PMOSFETs Xinlin Wang', Huiling Shang", Phil ...
Publications
Hole Mobility Enhancement Modeling and Scaling Study for High...
link.springer.com
In this work, we simulated the long channel Ge-buried channel PMOSFETs by using driftdiffusion equation and calibrated the commonly used silicon mobility model...
Simulation of Semiconductor Processes and Devices | SpringerLink
link.springer.com
Simulation of Semiconductor Processes and Devices , Huiling Shang ... Simulation of Semiconductor Processes and Devices 2004
Miscellaneous
Huiling Shang | LinkedIn
www.linkedin.com
View Huiling Shang's professional profile on LinkedIn. LinkedIn is the world's largest business network, helping professionals like Huiling Shang discover inside ...
EP A2 - Floating body field-effect transistors, and methods of...
patents.google.com
US *, 24 Jun 2004, 29 Dec 2005, Huiling Shang, Integration of strained Ge into advanced CMOS technology. US *, 8 Feb
WO A3 - Integration of strained ge into advanced cmos...
patents.google.com
... WO-A , WO A3, WO A3, WO A3. Inventors, Jack Oon Chu, Kathryn W Guarini, Meikei Ieong, Huiling Shang.
Characterization and analysis of gate-induced-drain-leakage current...
www.infona.pl
2007 IEEE International Integrated Reliability Workshop Final Report IEEE International Integrated Reliability Workshop Final Report Huiling Shang.
A Low Voltage SANOS Nonvolatile Semiconductor Memory (NVSM) Device
www.infona.pl
Huiling Shang--- autor White--- Bibliografia. Typ dokumentu. Bibliografia. Identyfikator YADDA. bwmeta1.element.ieee Identyfikatory. YADDA. bwmeta1 ...
IBM triples transistor performance with germanium | InfoWorld
www.infoworld.com
Big Blue claims to have improved the flow of electrons through transistors
2005 World Technology Award WINNERS and other new individual Fellows...
ftpwtn.b.civicrm.ca
... E Ink Corporation. OTHER NEW FELLOWS. Sumio Iijima, NEC; Kunle Olukotun, Stanford University; Geordie Rose, D-Wave Systems, Inc. Huiling Shang, IBM ...
Refdoc
cat.inist.fr
%0 ART %T Ultrathin Al[2]O[3] and HfO[2] gate dielectrics on surface-nitrided Ge %A JER-HUEIH CHEN James %A BOJARCZUK Nestor A. %A HUILING SHANG
High performance bulk planar 20nm CMOS technology for low power...
www.infona.pl
Huiling Shang. IBM Microelectronics, IBM Semiconductor Research and Development Center (SRDC), Route 52, Hopewell Junction, NY , USA ...
Taconic Road Runners Club Mother's Day May 8, Results - Taconic...
www.runner.org
: :42/M 155 Mary Latham Poughkeepsie NY : :43/M 156 Huiling Shang Yorktown Heights N ...
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