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Hirobumi Kawashima, 60, San Diego, Alejo Pl

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Hirobumi Kawashima: مفت ڈاؤنلوڈ. ای بک لائبریری۔ Z-Library پر آن ...ur.booksc.me › author

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Hirobumi Kawashima: مفت ڈاؤنلوڈ. ای بک لائبریری۔ Z-Library پر آن لائن کتابوں کی دکانیں | BookSC. Download books for free. Find books.

Hirobumi N: free download. Ebooks library. On-line books store on Z ...booksc.theproxy2.org › author

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Hirobumi Kawashima, Ryo Dang. Journal: Electronics and Communications in Japan (Part II: Electronics)). Year: Language: english. File: PDF, 170 KB.

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patentbuddy: Hirobumi Kawashima

KABUSHIKI KAISHA TOSHIBA, Tokyo, JP

Education

Non-Isothermal Device Simulation of Gate Switching and Drain ...search.ieice.org › bin › pdf_link

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Non-Isothermal Device Simulation of Gate Switching and. Drain Breakdown Characteristics of Si MOSFET in Transient State. Hirobumi KAWASHIMA.

Simulation Technique of Heating by Contact Resistance for ESD ...search.ieice.org › bin › summary

search.ieice.org

Hirobumi KAWASHIMA · Toyoaki MATSUHASHI · Naoyuki SHIGYO Publication IEICE TRANSACTIONS on Electronics Vol.E86-C No.3 pp

Books & Literature

Thermal breakdown simulation of Si MOSFET taking account of ...onlinelibrary.wiley.com › doi › abs

onlinelibrary.wiley.com

Thermal breakdown simulation of Si MOSFET taking account of thermal interdependence. Hirobumi Kawashima,. Hirobumi Kawashima. Hosei University, Koganei ...

Scientific Publications

Hirobumi Kawashima - dblpdblp.uni-trier.de › Persons

dblp.uni-trier.de

List of computer science publications by Hirobumi Kawashima.

Publications

Physical Modelling and experimental characterization of InAlAs ...www.researchgate.net › publication › _Physical_Modelling_an...

www.researchgate.net

Hirobumi Kawashima · Ryo DANG. In the area of semiconductor device simulations, a device model has been developed toward the highly accurate analysis of ...

Miscellaneous

Breakdown Voltage Prediction of Ultra-Thin Gate Insulator in ...www.semanticscholar.org › paper › Breakdown-Voltage-Prediction-of-Ultr...

www.semanticscholar.org

... author={Atsuhiro Kinoshita and Yuichiro Mitani and Kazuya Matsuzawa and Hirobumi Kawashima and C. Sutoh and J. Kurihara and Takahiro Hiraoka and Izumi ...

Numerical analysis of dc and transient characteristics on n+ OA.mgoa.mg › work

oa.mg

Won-Cheol Choi, Hirobumi Kawashima, Ryo Dang. MOSFET. Poisson's equation. Transient (computer programming). Share this. Twitter logo Facebook logo LinkedIn ...

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