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Geometry of arithmetic varieties, Beijing (BICMR) (2-6 September...
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Beijing International Center for Mathematical Research. Fuseau horaire Asia/Shanghai. Home · Program · List of participants · Registration ...
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Arxiv Sanity Preserver - TIB Labs
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Hideaki Ikoma. Feb. 20, math.AG ... In this paper, we introduce positivity notions for pairs of adelic R-Cartier divisors and R-base conditions, and study ...
JJAP - Google Books
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LowTemperature Si Oxidation Using Inductively Coupled Oxygen Masato Tabakomori and Hideaki Ikoma
Japanese Journal of Applied Physics: Regular papers, brief...
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Scientific. 3. LowTemperature Growth of Si Oxide with Good Electrical Qualities 8 Tatsuaki Tsukuda and Hideaki Ikoma
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Ikoma, Hideaki | DeepDyve
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Yoshinaga Okamoto and Hideaki Ikoma Faculty of Science and Technology, Science University of Tokyo, Noda, Chiba 278, Japan Received ...
[ ] On the concavity of the arithmetic volumes
arxiv.org
Oct 31, · Submission history From: Hideaki Ikoma Thu, 31 Oct :44:01 GMT (27kb) [v2] Mon, 9 Dec :07:09 GMT (27kb)
[ ] A numerical characterization of nef adelic divisors
arxiv.org
Feb 26, · Title: A numerical characterization of nef adelic divisors. Authors: Hideaki Ikoma ... From: Hideaki Ikoma Wed, 26 Feb :56:38 GMT (22kb) [v2] …
On the concavity of the arithmetic volumes – ScienceOpen
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On the concavity of the arithmetic volumes. Authors: Hideaki Ikoma. Publication date (Updated): Source: arXiv ID: License: ...
Publications
Improved electrical properties on the anodic oxide/InP interface for...
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Noboru Shibata and Hideaki Ikoma, Jpn. J. Appl. Phys. 31, (1992). View Article; 13. D.T. Clark and T. Fok, Thin Solid Films 70, 261 (1980). View Article; 14.
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Hideaki Ikoma Mathematics , 2014, Abstract: In this paper , we collect some fundamental properties of arithmetic restricted volumes (or arithmetic multiplicities) of ...
Miscellaneous
Title and Abstract - symposiumKyoto2017
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Title and Abstract. サイトマップ . Title and Abstract ... Hideaki Ikoma Title: Adelic Cartier divisors with base conditions and the Bonnesen–Diskant–type ...
US B2 - Method for forming single electron resistor memory...
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Method for forming a memory device that includes a plurality of cells, each having a first electrode coupled to a first location on semiconductor...
au:Ikoma_H in:math - SciRate Search
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In this paper, we collect some fundamental properties of arithmetic restricted volumes (or arithmetic multiplicities) of the adelically metrized line bundles.
Sparrho | A numerical characterization of nef adelic divisors
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A numerical characterization of nef adelic divisors. Hideaki Ikoma. Mathematics - Algebraic Geometry. Imported: 20 Jan | Published:
Program - arakelovkyoto15
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Program. Sitemap. Program. Program. September 3 (Thursday): Kansai Seminar House. 16: :00 Registration and open discussion : :45 Hideaki Ikoma ...
Participants - Google Sites
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University of Tokyo, Japan. 35, Hideaki Ikoma, Kyoto University, Japan. 36, Hiroyuki Inou, Kyoto University, Japan. 37, Hideyuki Ishi, Nagoya University, Japan.
US B2 - GaAs-based semiconductor field-effect transistor...
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A GaAs-based semiconductor field-effect transistor in which electrons flowing from a source electrode to a drain electrode are controlled by a signal...
Algebraic Geometry authors/titles Aug (15 skipped)arxiv-export-lb.library.cornell.edu › list › math.AG
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Authors: Huayi Chen (IMJ-PRG), Hideaki Ikoma. Subjects: Algebraic Geometry (math.AG); Commutative Algebra (math.AC). [19] arXiv: [src]. Title: On ...
Archive AG Activities in Chinawww.alggeom.org › ...
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Ke Chen (Nanjing). Yanbo Fang (Paris) Mounir Hajli (Shanghai) Marc Hindry (Paris) Yong Hu (Shenzhen). Zhizhong Huang (Hannover) Hideaki Ikoma (Kyoto)
arakelovkyoto15
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Aug 31, · Hideaki Ikoma (Univ. Tokyo) Klaus Künnemann (Univ. Regensburg) Yuji Odaka (Kyoto Univ.) Aurélien Rodriguez (Univ. Essen) Emmanuel Ullmo (IHES)
Patent US Single electron resistor memory device ...
patents.google.com
38, *, Masato Tarakomori and Hideaki Ikoma, Low Temperature Si Oxidation Using Inductively Coupled Oxygen Argon Mixed Plasma, Jpn. J. Appl. Phys .
US B2 - Semiconductor device, semiconductor layer and...
patents.google.com
... obtained (refer to Toshiaki Ikoma and Hideaki Ikoma, Kagobutsu Handotai no Kiso Bussei Nyumon (Basic Physical Properties of Compound Semiconductors, ...
Cross Reference Logo Citations to this article as recorded by ...pubs.rsc.org › content › forwardlinks
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Shinya Morikita and Hideaki Ikoma. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2003, 21, DOI:
AMS :: J. Algebraic Geom. -- Volume 22, Number 2
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Hideaki Ikoma. J. Algebraic Geom. 22 (2013), Abstract, references and article information Full-text PDF MathSciNet review: Positivity and vanishing theorems for ample vector bundles Kefeng Liu, Xiaofeng Sun and Xiaokui Yang. J. Algebraic Geom. 22 (2013), Abstract, references and article information Full-text PDF ...
Ikoma : A Bertini-type theorem for free arithmetic linear series
projecteuclid.org
Project Euclid - mathematics and statistics online
WO A1 - Dispositif de memoire flash et son procede de...
patents.google.com
L'invention concerne un procédé de fabrication d'une mémoire flash, qui consiste à produire un plasma haute densité à partir d'un mélange gazeux de Kr et d'un...
US A - Single electron MOSFET memory device and method...
patents.google.com
A memory device and related methods are described. The memory device includes a plurality of cells, each cell including a MOSFET having a source coupled...
US B2 - Compound semiconductor device, production method...
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A semiconductor device having a silicon single crystal substrate and a boron phosphide semiconductor layer containing boron and phosphorus as constituent...
The Faltings-Moriwaki modular height and isogenies of elliptic curves
projecteuclid.org
Kyoto Journal of Mathematics
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