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News
Empresa americana prevê instalação de fábrica de semicondutores no...
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A Symetrix Corporation, empresa americana que tem entre seus donos um brasileiro, anuncia hoje, em Brasília, um projeto de fábrica de semicondutores, com...
Major Java Progress Reported at CarteS - Smart Card News
www.smartcard.co.uk
Dr Gota Kano, Member of the Board and Managing Director of Matsushita Electronics Corporation said the use of FERAM technology had the potential to
RUBENS BARBOSA & ASSOCIADOS
www.rbarbosaconsult.com.br
... estava Gota Kano, diretor do conselho e conselheiro do presidente mundial da Panasonic. No ano passado, o Brasil importou US$ 3,45 bilhões em semicondutores,
Network Profiles
LinkedIn: Gota Kano | LinkedIn
Visa Gota Kanos yrkesprofil på LinkedIn. LinkedIn är världens största yrkesnätverk och hjälper yrkespersoner som Gota Kano att upptäcka interna kontakter till ...
LinkedIn: Gota Kano | LinkedIn
Gota Kanoさん (日本) のLinkedInプロフィールを閲覧するLinkedInは、Gota Kanoさんや世界中のプロフェッショナルが活動する
LinkedIn: Gota Kano | LinkedIn
Gota Kanos berufliches Profil anzeigen LinkedIn ist das weltweit größte berufliche Netzwerk, das Fach- und Führungskräften wie Gota Kano dabei hilft, interne ...
Interests
Patent Summary - Canadian Patents Database
brevets-patents.ic.gc.ca
Canadian Patent Database / Base de données sur les brevets canadiens
Business Profiles
patentbuddy: Gota Kano
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD., Kyoto, JP
Private Homepages
Gota Kano (Former Managing Director at Matsushita Electronics...
www.kanoentrepreneur.com
Gota Kano (Former Managing Director at Matsushita Electronics Manufacturing Co.)-Kano Technology management laboratory
Education
Gota Kano - US-Asia Technology Management Center - Stanford ...
asia.stanford.edu
Gota Kano was born in Hyogo Prefecture. He received both BS and Ph.D. degrees in Electrical Engineering from Osaka University in and ...
A BiCMOS Analog Neural Network with Dynamically Updated ...search.ieice.org › bin › summary
search.ieice.org
Takayuki MORISHITA Youichi TAMURA Tatsuo OTSUKI Gota KANO Publication IEICE TRANSACTIONS on Electronics Vol.E75-C No.3 pp Publication ...
| Stanford US-Asia Technology Management Center |
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Gota Kano Professor, Kochi University of Technology. Gota Kano received both BS and Ph.D. degrees in Electrical Engineering from Osaka University.
IEICE SEARCH SYSTEM
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Kunihiko KANAZAWA · Masahiro HAGIO · Masaru KAZUMURA · Gota KANO Publication IEICE TRANSACTIONS ( ) Vol.E71 No
Books & Literature
ken-system: - All Technical Committee Conferences - All Years
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Search Results: Conference Papers I-Scover Search by: 'Gota Kano'. Conference Papers (Available on Advance Programs) (Sort by: Date ...
Electrical Properties of Solids: Surface Preparation and Methods of...
books.google.de
Since the Research Materials Information Center has been answering inquiries on the availability, preparation, and properties of ultrapure inorganic...
Microcircuit Reliability Bibliography - Google Books
books.google.nl
2044 Gota Kano ; et al. (Matsushita Electronics Corp., Res. Lab., Takatsuki, Osaka, Japan) IMPROVEMENTS OF REVERSE I-V CHARACTERISTICS IN ...
Official Gazette of the United States Patent Office: Patentsbooks.google.nl › books
books.google.nl
... REVERSELEAKAGE CURRENTS AND METHOD FOR MAKING THE SAME Gota Kano, Uguisudai; Mutsuo Iizuka, Oaza-Hoshida; Shohei Fujiwara; Hiromasa ...
Related Documents
Semiconductor device and method of fabricating the same - Electronics...
www.freepatentsonline.com
Provided are a semiconductor device and a method of fabricating the same. The method includes: forming a trench in a semiconductor substrate of a first...
High-voltage semiconductor component - Infineon AG
www.freepatentsonline.com
Daisuke Ueda, Hiromitsu Takagi, Gota Kano: An Ultra-Low On-Resistance Power MOSFET Fabricated by Using a Fully Self-Aligned Process No Date.
Complementary JFET negative-resistance devicesyawp.com › ref-library › subjects › circuits › gyrators
yawp.com
GOTA KANO. Abstract–A new type of negative-resistance device utifizing a simple combination of complementary JFET's, which is suitable not only for discrete ...
Suppression of feedback-induced noise in OSAwww.osapublishing.org › abstract
opg.optica.org
NORIYUKI YOSHIKAWA, MITSUO TAMURA, KEN HAMADA, MASAHIRO KUME, HIROKAZU SHIMIZU, GOTA KANO, and IWAO TERAMOTO. Author Information ...
Scientific Publications
A new technique for growth of thermal oxide films on GaAs -...
www.sciencedirect.com
A new technique for growth of thermal oxide films on GaAs Hiromitsu Takagi, Gota Kano, Iwao Teramoto. Research Laboratory, Matsushita Electronics Corp ...
780 nm GaAlAs distributed feedback lasers - ScienceDirect
www.sciencedirect.com
The 780 nm GaAlAs distributed feedback lasers have been fabricated by hybrid liquid phase ... MASAHIRO KUME,' HIRoKAzu SHIMIzu' and GoTA KANO ...
Direct MOVPE growth of InP on GaAs substrates - ScienceDirect
www.sciencedirect.com
Akio Yoshikawa,; Takashi Sugino,; Akira Nakamura,; Gota Kano,; Iwao Teramoto. Electronics Research Laboratory, Matsushita Electronics ...
Solid-State Electronics | Vol 32, Issue 7, Pages (July 1989)...
www.sciencedirect.com
Original Research Article; Pages ; Shinichi Takigawa, Tomoaki Uno, Ken Hamada, Masahiro Kume, Hirokazu Shimizu, Gota Kano. Abstract; PDF (490 K).
Video & Audio
Gota Kano - YouTubewww.youtube.com › channel
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Gota Kano. SubscribeSubscribedUnsubscribe 1. Loading... Loading... Working... Uploads Play all. 5: 番目西本清一 - Duration: 5 minutes, 11 seconds.
Miscellaneous
Gota Kano | LinkedIn
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View Gota Kano's professional profile on LinkedIn. LinkedIn is the world's largest business network, helping professionals like Gota Kano discover inside connections
DE A1 - Halbleitereinrichtung und Verfahren zum Herstellen...
patents.google.com
Inventor Gota Kano Mutsui Iizuka Shohei Fujiwara Hiromasa Hasegawa Tsukasa Sawaki Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EP A2 - Ferroelectric flat panel displays Google...
patents.google.com
A thin film of ferroelectric layered superlattice material in a flat panel display device is energized to selectively influence the display image. In one...
DE D1 - Verfahren zur beschichtung eines zum ...google.com › patents
patents.google.com
Other languages: German: English; Inventor: Gota Kano: De Araujo A Paz: Koji Arita: C Scott: D Mcmillan: Shinichiro Hayashi; Current Assignee. The listed ...
外文检索-中国知网
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CNKI学术搜索是一个基于海量资源的跨学科、跨语种、跨文献类型的学术资源搜索平台，其资源库涵盖各类学术期刊、论文、报纸、专利、标准、年鉴、工具书等，旨在为国内外研究人员提供全面、权威、系统的知识网络。
Gota Kano – Who's Who Lifetime Achievement
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Title: Professor Emeritus Company: Kochi University of Technology Location: Kyoto, Japan Achievements: Inductee, Worldwide Lifetime Achievement (2017) Recipient, Lifetime Achievement, International Symposium on Integrated Ferroelectrics (1999) Recipient, Fellowship Award, IEEE (1995) Designations: Doctor of Philosophy in …
1995 New Fellows - IEEE Japan Councilieee-jp.org › ... › IEEE Fellows in Japan
ieee-jp.org
7, Gota Kano, Matsushita Electronics, For contribution to research, development and industrialization of GaAs devices, particularly UHF FET itegrated circuits ...
CA A - Methode de fabrication de dispositifs fet
patents.google.com
Inventeurs, Hiromitsu Takagi, Shotaro Umebachi, Gota Kano, Iwao Teramoto. Déposant, Matsushita Electronics Corp. Exporter la citation ...
US A - Schottky barrier semiconductor device having a...
patents.google.com
A semi-conductor device, such as diode transistor, field effect transistor with a Schottky barrier, has a separation space formed underneath the...
US B1 - High-voltage semiconductor component Google...
patents.google.com
Daisuke Ueda, Hiromitsu Takagi, Gota Kano: An Ultra-Low On-Resistance Power MOSFET Fabricated by Using a Fully Self-Aligned Process No Date. 26:
780 nm gaalas distributed feedback lasers - InvenZone
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Discuss about this paper : 780 nm gaalas distributed feedback lasers. Platform for researcher
Expectation for entrepreneur and entrepreneur engineering —...
shibaura.pure.elsevier.com
Expectation for entrepreneur and entrepreneur engineering. Gota Kano, Makoto Hirano. Research output: Contribution to journal › Article ...
PhDTree: academic genealogy & family tree
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phdtree is the most comprehensive online database & wiki on academic genealogy & academic family tree for every disciplines.
US A - Method of manufacturing a junction field effect...
patents.google.com
A method of manufacturing a junction field effect transistor wherein after a P type pre-diffused layer is formed in an N type region constituting a back...
US A - Method for forming electrode in semiconductor ...www.google.co.in › patents
patents.google.com
Download PDF Find Prior Art Similar. Inventor: Morio Inoue: Gota Kano: Jinichi Matsuno: Shigetoshi Takayanagi; Current Assignee. The listed assignees may be ...
DE A1 - Verfahren zum herstellen eines...
patents.google.com
Inventors, Gota Kano, Satoshi Teramoto. Applicant, Matsushita Electronics Corp. Export Citation, BiBTeX, EndNote, RefMan. Patent Citations (8), Non-Patent ...
Update SEPTEMBER AT PENN - Almanac, Vol. 46, No. 04,
almanac.upenn.edu
TALKS. 23 HIV Clinical Monitoring: Relationship to Viral Pathogenesis; William O'Brien, U. Texas Med; 3-4 p.m.; BRB II/III Auditorium (Center for AIDS Research).. Patterns of Innovation and Competitive Advantage in the Semiconductor and Display Industries; Gota Kano, Kochi University of Technology; 5-6:30 p.m.; Yasuda Room, Steinberg …
先進固態元件與製程 Advanced solid state device and process - 國立交通大學國際半導體產業學院
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第1週_ 講者： Gota Kano (日本Kochi University of Technology, IEEE Life Fellow) 主題：Entrepreneur Engineering (9/15~9/17) 1.
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EP A3 - Field effect transistor Google Patents
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... EP A3, EP-A , EP A3, EP A3, EP , EP Inventors, Shutaro Nanbu, Atsushi Nagashima, Gota Kano.
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