Chih-Cheng Shih and Ting-Chang - Free people check

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Controllable set voltage in bilayer ZnO:SiO2/ZnOx resistance random...

core.ac.uk

Controllable set voltage in bilayer ZnO:SiO2/ZnOx resistance random access memory by oxygen concentration gradient manipulation By Xuan Huang, Kuan-Chang Chang, Ting-Chang Chang, Tsung-Ming Tsai, Chih-Cheng Shih, Rui Zhang, Syuan-Yong Huang, Kai-Huang Chen, Jung-Hui Chen, Huei-Jruan Wang, Wen-Jen Chen, Fengyan Zhang, Chao Chen, Sz and 张风燕

All web results to the name "Chih-Cheng Shih"

Print Page - Google Sites

sites.google.com

Kuan-Chang Chang, Ting-Chang Chang, Tsung-Ming Tsai, Rui Zhang, Ya-Chi Hung, Yong-En Syu, Yao-Feng Chang, Min-Chen Chen, Tian-Jian Chu, Hsin-Lu Chen, Chih-Hung Pan, Chih-Cheng Shih, Jin-Cheng Zheng, Simon M Sze, "Physical and chemical mechanisms in oxide-based resistance ...

"Mechanism of thermal field and electric field in ...

dc.engconfintl.org

Recommended Citation. Yi-Ting Tseng, Ting-Chang Chang, Chih-Cheng Shih, and Po-Hsun Chen, "Mechanism of thermal field and electric field in resistive random access memory using the high/low-k side wall structure" in "Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors VII", Yue Kuo, Texas A&M University, USA Junichi Murota, …

Figure 1 from Surface scattering mechanisms of tantalum ...

www.semanticscholar.org

@inproceedings{Chen2014SurfaceSM, title={Surface scattering mechanisms of tantalum nitride thin film resistor}, author={Huey-Ru Chen and Y. C. Chen and Ting-Chang Chang and Kuan-Chang Chang and Tsung-Ming Tsai and Tian-Jian Chu and Chih-Cheng Shih and Nai-Chuan Chuang and Kao-Yuan Wang}, booktitle={Nanoscale Research Letters}, year={2014} }

High performance of graphene oxide-doped silicon oxide-based...

nanoscalereslett.springeropen.com

... Ting-Chang Chang*, Tsung-Ming Tsai, Kai-Huang Chen, Jen-Chung Lou, Jung-Hui Chen*, Tai-Fa Young, Chih-Cheng Shih, Ya-Liang Yang, ...

Surface scattering mechanisms of tantalum nitride thin film resistor...

nanoscalereslett.springeropen.com

Huey-Ru Chen, Ying-Chung Chen*, Ting-Chang Chang*, Kuan-Chang Chang, Tsung-Ming Tsai, Tian-Jian Chu, Chih-Cheng Shih, Nai-Chuan ...

Resistive Random Access Memory: Solving the Scaling Issue of...

en.x-mol.com

... Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High-k Spacer Structure (Adv. Electron. Mater )，Yi-Ting Tseng, Po-Hsun Chen, Ting-Chang Chang, Kuan-Chang Chang, Tsung-Ming Tsai, Chih-Cheng Shih, Hui-Chun Huang, Cheng-Chi Yang, ...

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