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Bohumil Lojek, Cambridge, Twin Point Cove Rd
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Bohumil Lojek, 69, Mount Pleasant, Ponsbury Rd
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Bohumil R Lojek, 69, Colorado Springs, Langdale Way
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Bohumil Lojek. Age 67. Business Assoc. Address Langdale Way Colorado Springs, CO Possible Relatives. Libuse Lojek Hoefler · Bohumil R Lojek ...
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Bohumil Lojek - Patents
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Bohumil Lojek patents Recent bibliographic sampling of Bohumil Lojek patents listed/published in the public domain by the USPTO (USPTO Patent Application #,Title):
BOHUMIL LOJEK married HANA LASTOVICKOVA on December 10, in Texas
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Marriage license info from public records: BOHUMIL LOJEK and HANA LASTOVICKOVA December 10, 1996
Business Profiles
patentbuddy: Bohumil Lojek
ATMEL CORPORATION, Colorado Springs, CO, US
Education
1st International Rapid Thermal Processing Conference : RTP'93 ;...
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Mugshots Online Bohumil Lojek | Austin, TX
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Bohumil Lojek busted Austin, TX - REQUEST TO APPREHEND
Books & Literature
Advances in Rapid Thermal and Integrated Processing - Google Books
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Rapid thermal and integrated processing is an emerging single-wafer technology in ULSI semiconductor manufacturing, electrical engineering, applied physics and...
1st International Rapid Thermal Processing Conference: RTP'93 ;...
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... September 8-10, 1993, The Phoenician, Scottsdale, Arizona. Front Cover. Richard B. Fair, Bohumil Lojek. RTP'93, Semiconductor doping pages.
Related Documents
DOPING PROCESS FOR PRODUCING HOMOJUNCTIONS IN SEMICONDUCTOR...
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Lojek, Bohumil [WorldCat Identities]
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Most widely held works by Bohumil Lojek. 1st International Rapid Thermal Processing Conference : RTP'93 ; September 8-10, 1993, the Phoenician, Scottsdale, ...
Dotierverfahren zur Herstellung von Homoübergängen in...
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The invention relates to a doping process for producing homojunctions in semiconductor substrates, into which dopants penetrate by diffusion, with a light...
Publications
Lojek, Bohumil [WorldCat Identities]
orlabs.oclc.org
1st International Rapid Thermal Processing Conference : RTP'93 ; September 8-10, 1993, the Phoenician, Scottsdale, Arizona by International Rapid Thermal Processing
Advances in Rapid Thermal and Integrated Processing | SpringerLink
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Rapid thermal and integrated processing is an emerging single-wafer technology in ULSI semiconductor manufacturing, electrical engineering, applied physics and...
The Evolving Role of Rapid Thermal Processing for Deep Submicron...
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The Evolving Role of Rapid Thermal Processing for Deep Submicron Devices. Bohumil Lojek
Miscellaneous
US B2 - Double sidewall short channel split gate flash memory...
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An electrically programmable read only memory device which has efficiency of electron injection from channel to floating gate is provided. This memory...
US B2 - Method of making EEPROM transistor pairs for block...
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A block alterable memory cell has a select control gate extending from a floating gate region to a drain region. The block alterable memory cell...
WO A2 - Eeprom cell with adjustable barrier in the tunnel...
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Bohumil Lojek: Candidato: Atmel Corp, Bohumil Lojek: Esporta citazione: BiBTeX, EndNote, RefMan: Citazioni di brevetti (3), Classificazioni (8), Eventi legali (3)
Bohumil Lojek in Mount Pleasant, SC - Listing Details - Yellow Pages...
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Bohumil Lojek is located in Mount Pleasant SC according to public information records. First Name, Phone Number, Name Origin and Meaning for the person...
Bohumil Lojek, Colorado Springs US - Patent applications
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Patent application number Description Published; : SEMICONDUCTOR UV ABSORPTIVE PHOTOMETRIC CELLS - Biomolecules in solid or liquid form are targeted with a ...
Reissue Applications Filed - OG Date: 20 September 2005
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Bohumil Lojek, et al., Owner of Record: Atmel Corporation, San Jose, ...
US A - Method for forming thin tunneling windows in EEPROMs...
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A method for making submicron dielectric windows for electron tunneling between a floating gate and substrate in a semiconductor EEPROM device. A mask...
US B1 - Nanocrystal electron device Google Patents
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A MOS transistor having utility as a charge storage device, as in a nonvolatile memory device, or as an amplifier, using the charge storage feature of...
WO A3 - Memory cell with reduced size and standby current...
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Inventor Bohumil Lojek Original Assignee Atmel Corp Bohumil Lojek Priority date (The priority date is an assumption and is not a legal conclusion. Google has not ...
MEMORY DEVICE HAVING SMALL ARRAY AREA - Patent application
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Patent application title: MEMORY DEVICE HAVING SMALL ARRAY AREA Inventors: Bohumil Lojek (Colorado Springs, CO, US) Assignees: ATMEL CORPORATION
37 CFR Notice by Publication - OG Date: 26 February 2002
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Bohumil Lojek Non-Volatile Semiconductor Memory Device
SEMICONDUCTOR UV ABSORPTIVE PHOTOMETRIC CELLS - Patent application
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Patent application title: SEMICONDUCTOR UV ABSORPTIVE PHOTOMETRIC CELLS Inventors: Bohumil Lojek (Colorado Springs, CO, US) Assignees: ATMEL CORPORATION
US B1 - Method for fabricating control gate and floating gate...
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A method for fabricating the control gate and floating gate of a flash memory cell. An active area is firstly formed on a semiconductor substrate,...
US B2 - Contactless nonvolatile memory array Google...
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An array of memory cells with non-volatile memory transistors having a compact arrangement of diagonally symmetric floating gates. The floating gates...
Ex Parte Lojek et al - Page 1 - Patent Attorney Resources - Board of...
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Board of Patent Appeals cases, opinions and decisions.
世界专利信息试验检索平台 专利具体内容
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波修米爾洛傑克BOHUMIL LOJEK, [52] 欧洲/日本分类, H03K B H03K B H03K [51] 国际主分类, H01L , [51] 国际分类, H01L
US B2 - Semiconductor-on-insulator (SOI) structure and method...
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Bohumil Lojek: FinFET transistor fabricated in bulk semiconducting material: US : 10 apr 2007: 2 aug 2007: Samsung Electronics Co., Ltd.
US B1 - Self-aligned STI with single poly for manufacturing a...
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A method for fabricating a memory device with a self-aligned trap layer and rounded active region corners is disclosed. In the present invention, an STI...
CA A1 - Ultra small thin windows in floating gate transistors...
patents.google.com
Applicant, Atmel Corporation, Eleonore Daemen, Alan L. Renninger, Bohumil Lojek. Export Citation, BiBTeX, EndNote, RefMan. Classifications (19), Legal ...
US B2 - Thin film transistor using a carbon nanotube as a...
patents.google.com
A thin film transistor includes a gate electrode configured to receive a control voltage, a source electrode insulated from the gate electrode, and...
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