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Characterization of materials for semiconductor devices by means of...
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Akira Uedono (University of Tsukuba · School of Science and Engineering). Monday 9 Jul 2018, 14:30 → 15:30 Europe/Berlin. HS 3 (Physics Department) ...
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LinkedIn: Akira Uedono - Professor - University of Tsukuba | LinkedIn
Japan - University of Tsukuba#####View Akira Uedono's profile on LinkedIn, the world's largest professional community. Akira has 1 job listed on their profile. See the complete profile on LinkedIn ...
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Akira Uedonoさんのプロフィールをチェックしましょう。LinkedInは、Akira Uedonoさんのような方が活動する世界最大のプロフェッショナルネットワークです。今すぐあなたも ...
Business Profiles
Researchgate: Akira Uedono
Tsukuba, Japan
Akira UEDONO | Professor (Full) | PhD | University of Tsukuba ...www.researchgate.net › ... › School of Science and Engineering
www.researchgate.net
Akira UEDONO, Professor (Full) | Cited by | of University of Tsukuba, Tsukuba | Read 451 publications | Contact Akira UEDONO.
patentbuddy: Akira Uedono
TOKYO ELECTRON LIMITED, Tsukuba, JP
Books & Literature
The depth profiles of ion implantation induced vacancy-type defects ...www.tandfonline.com › ... › List of Issues › Volume 124, Issue 1
www.tandfonline.com
Akira Uedono Institute of Materials Science, University of Tsukuba , Tsukuba, Ibaraki, 305, Japan ; Department of Industrial Chemistry , Faculty of Engineering, ...
Free volumes in polystyrene probed by positron annihilation - Ban ...onlinelibrary.wiley.com › doi › abs
onlinelibrary.wiley.com
Akira Uedono. Institute of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305, Japan. Search for more papers by this author · Takao Kawano.
Probing the effect of point defects on the leakage blocking capability ...biblio.ugent.be › publication
biblio.ugent.be
Author: Akira Uedono, Ming Zhao and Eddy Simoen (UGent); Organization. Department of Solid state sciences. Abstract: Vacancy-type defects in Al0.1Ga0.9N ...
【論文著者】Uedono Akira UEDONO Akira Institute of Materials ...acaddb.com › articles › authors
acaddb.com
論文著者 Uedono Akira UEDONO Akira Institute of Materials Science, University of Tsukuba ID 関連所属. Institute of Materials Science, ...
Related Documents
Determination of Pore Size in Mesoporous Thin Films from the ...pubs.acs.org › doi › abs
pubs.acs.org
28 Apr · ... Sagara, Hiroki Yabe, X. Chen, Philippe M. Vereecken, Akira Uedono Akira Uedono, Patrick Verdonck, Annelies Delabie, Johan Swerts, ...
Akira Uedono - Homedl.acm.org › profile
dl.acm.org
Akira Uedono · Subject Areas · Published Items by Year · Keywords · Author's Latest Publications · Most Popular.
CiteSeerX — ARTICLES Origin of defect-insensitive emission...
citeseerx.ist.psu.edu
BibTeX @MISC{Chichibu06articlesorigin, author = {Shigefusa F. Chichibu and Akira Uedono and Takeyoshi Onuma and Benjamin A. Haskell and Arpan Chakraborty and …
Annihilation of positronium in α-Si O 2 investigated by ...
journals.aps.org
S. Dannefaer, T. Friessnegg, D. Kerr, Akira Uedono, Xiaohe Li, and Shoichiro Tanigawa. Phys. Rev. B 54, – Published 1 December ...
Scientific Publications
Origin of defect-insensitive emission probability in In-containing (Al ...pubmed.ncbi.nlm.nih.gov › ...
pubmed.ncbi.nlm.nih.gov
Shigefusa F Chichibu , Akira Uedono, Takeyoshi Onuma, Benjamin A Haskell, Arpan Chakraborty, Takahiro Koyama, Paul T Fini, Stacia Keller, Steven P ...
Akira Uedono - dblpdblp.org › Persons
dblp.org
... Hiroshi Hashimoto, Akihito Kawai, Kazuhisa Arai, Akira Uedono , Takayuki Ohba: Influence of wafer thinning process on backside damage in 3D integration.
Publications
Akira Uedono | PubFactswww.pubfacts.com › author › Akira+Uedono
www.pubfacts.com
Publications by authors named "Akira Uedono" · Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a ...
Characterization of Metal-Oxide-Silicon Interface by Monoenergetic...
link.springer.com
MOS device interfaces are investigated using carrier injection and monoenergetic positron beam experiments. Carrier injection reveals that the holes inject
Positron annihilation studies of defects in 3CSiC hot-implanted with...
link.springer.com
Positron annihilation studies of defects in 3CSiC hot-implanted with nitrogen and aluminum ions ... Akira Uedono Affiliated with Institute of Materials Science, ...
Impacts of Dislocations and Point Defects on the Internal Quantum...
link.springer.com
and Akira Uedono. Abstract In this chapter, we show the impact of point defects rather than threading dislocations (TDs) on the emission dynamics of the near-band-edge. (NBE) excitonic luminescence in AlN and high AlN mole fraction (x) AlxGa1−xN alloy films using deep ultraviolet (DUV) time-resolved luminescence and ...
Reports & Statements
Effects of ultra-high-pressure annealing on characteristics of ...www.nature.com › scientific reports › articles › article
www.nature.com
15 Oct · Akira Uedono. IMaSS, Nagoya University, AichiJapan. Hideki Sakurai, Michal Bockowski, Jun Suda, Shigefusa F. Chichibu & Tetsu ...
Miscellaneous
Guests at the Chair for Plasma and Atomic Physicswww.ep5.ruhr-uni-bochum.de › gaeste_en
www.ep5.ruhr-uni-bochum.de
Dr. Akira Uedono, Faculty of Pure and Applied Science, University of Tsukuba, Japan14:15 Uhr, "Study of vacancies and open spaces in solids by ...
Akira Uedono | LinkedIn
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View Akira Uedono's professional profile on LinkedIn. LinkedIn is the world's largest business network, helping professionals like Akira Uedono discover inside ...
Akira Uedono: 免费的Z-Library数字图书馆zh.booksc.xyz › ...
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Akira Uedono: 免费的Z-Library数字图书馆 | BookSC. Download books for free. Find books.
Akira Uedono ( ) - ORCID | Connecting ...orcid.org › ...
orcid.org
27 Dec · National Institute for Materials Science: Tsukuba, JP to present | Guest researcher. Invited position. Source: Akira Uedono.
Uedono Akira | Researcher Information | J-GLOBALjglobal.jst.go.jp › detail
jglobal.jst.go.jp
B · Akira Uedono, Marcel Dickmann, Werner Egger, Christoph Hugenschmidt, Shoji Ishibashi, Shigefusa F. Chichibu. Control of vacancy-type ...
A study on vacancy-type defects in the electroless Cu measured with ...www.infona.pl › resource
www.infona.pl
A study on vacancy-type defects in the electroless Cu measured with a monoenergetic positron beam. Kimihiro Yamanaka, Akira Uedono · Details · Contributors ...
CHICHIBU Shigefusa - Tohoku Universitydb.tohoku.ac.jp › whois › view
db.tohoku.ac.jp
[Scientific Reports,10(1),(2020), ]Akira Uedono, Hideki Sakurai, Tetsuo Narita, Kacper Sierakowski, Michal Bockowski, Jun Suda, Shoji Ishibashi, ...
Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN ...tohoku.pure.elsevier.com › publications › carrier-trapping-by-vacancy-typ...
tohoku.pure.elsevier.com
Akira Uedono, Shinya Takashima, Masaharu Edo, Katsunori Ueno, Hideaki Matsuyama, Werner Egger, Tönjes Koschine, Christoph Hugenschmidt, Marcel ...
Characterization of Metal-Oxide-Silicon Interface by Monoenergetic ...www.cambridge.org › mrs-online-proceedings-library-archive › article › c...
www.cambridge.org
Characterization of Metal-Oxide-Silicon Interface by Monoenergetic Positron Beam. Yuzuru Ohji (a1), Akira Uedono (a2), Long Wei (a3), Yasushi Tabuki (a3) ...
Dynamic Observation and Theoretical Analysis of Initial O2 Molecule ...figshare.com › collections › Dynamic_Observation_and_Theoretical_Anal...
figshare.com
10 Nov · AUTHORS (6). MS. Masatomo Sumiya. MS. Masato Sumita. YA. Yuya Asai. RT. Ryo Tamura. AU. Akira Uedono. AY. Akitaka Yoshigoe ...
Evaluation of SOI substrates by positron annihilation — Meiji ...meiji.elsevierpure.com › publications › evaluation-of-soi-substrates-by-posi...
meiji.elsevierpure.com
Akira Uedono, Atsushi Ogura, Shoichiro Tanigawa. Department of Electronics and Bioinformatics. Research output: Contribution to journal › Article › peer-review.
Influence of Ga–OH Bond at Initial GaN Surface on Electrical ...www.researcher-app.com › paper
www.researcher-app.com
Akira Uedono, Wataru Ueno, Takahiro Yamada, Takuji Hosoi, Werner Egger, Tönjes Koschine, Christoph Hugenschmidt, Marcel Dickmann, Heiji Watanabe.
OUCIouci.dntb.gov.ua › ...
ouci.dntb.gov.ua
Akira Uedono, Wataru Ueno, Takahiro Yamada, Takuji Hosoi, Werner Egger, Tönjes Koschine, Christoph Hugenschmidt, Marcel Dickmann, Heiji Watanabe.
SLOPOS-15 conference, Prague, September 2-6, 2019physics.mff.cuni.cz › kfnt › slopos
physics.mff.cuni.cz
... Eve Stenson, Max-Planck-Institute for Plasma Physics, Garching, Germany; Filip Tuomisto, Aalto University, Finland; Akira Uedono, University of Tsukuba, ...
Staff, guests and alumni of the Nuclear Physics Division - Helmholtz ...www.hzdr.de › Cms
www.hzdr.de
Akira Uedono, AIST and Tsukuba University, Japan; Dr. Sharon May-Tal Beck, Nuclear Research Center Negev, Israel; Dr. Arie Beck, Nuclear Research Center ...
つくばリポジトリtsukuba.repo.nii.ac.jp › ...
tsukuba.repo.nii.ac.jp
Akira UEDONO , Alexandra-Madalina Siladie , Julien Pernot , Bruno Daudin , Shoji Ishibashi , Journal of applied physics,125(17), ( ) , ©
AlN metal-semiconductor field-effect transistors using Si-ion ...research.aalto.fi › publications › aln-metal-semiconductor-field-effect-trans...
research.aalto.fi
1 Apr · ... using Si-ion implantation. Hironori Okumura, Sami Suihkonen, Jori Lemettinen, Akira Uedono, Yuhao Zhang, Daniel Piedra, Tomás Palacios.
Annihilation of positronium in α-Si O 2 investigated by combined ...link.aps.org › doi › PhysRevB
link.aps.org
1 Dec · S. Dannefaer, T. Friessnegg, D. Kerr, Akira Uedono, Xiaohe Li, and Shoichiro Tanigawa. Phys. Rev. B 54, – Published 1 December ...
Control of vacancy-type defects in Mg implanted GaN studied by ...www.spiedigitallibrary.org › short
www.spiedigitallibrary.org
16 Feb · Akira Uedono, Marcel Dickmann, Werner Egger, Christoph Hugenschmidt, Shoji Ishibashi, Shigefusa F. Chichibu. Author Affiliations +.
Nobel Prize in Physics :: ChemViews Magazine ...www.chemistryviews.org › details › ezine › Nobel_Prize_in_Physics_2014
www.chemistryviews.org
7 Oct · ... probability in In-containing (Al,In,Ga)N alloy semiconductors, Shigefusa F. Chichibu, Akira Uedono, Takeyoshi Onuma, Benjamin A. Haskell, ...
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